Philips BU2727AW Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2727AW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection
circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand V
1700V.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
I
P
V
I
t
C
CM
Csat
s
CESM
CEO
tot
CEsat
Collector-emitter voltage peak value VBE = 0 V - 1700 V
Collector-emitter voltage (open base) - 825 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 5.0 A; IB = 0.91 A - 1.0 V
Collector saturation current 5.0 - A
Storage time ICM = 5.0 A; I
= 0.9 A 2.2 tbf µs
B(end)
PINNING - SOT429 PIN CONFIGURATION SYMBOL
pulses up to
CES
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1700 V
Collector-emitter voltage (open base) - 825 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Base current (DC) - 12 A
Base current peak value - 25 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
ESD LIMITING VALUES
2
1
3
e
-25A
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
1 Turn-off current.
Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV
1.5 kΩ)
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2727AW
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 825 - - V
L = 25 mH
Collector-emitter saturation voltage IC = 5.0 A; IB = 0.91 A - - 1.0 V
Base-emitter saturation voltage IC = 5.0 A; IB = 0.91 A 0.78 0.86 0.95 V
DC current gain IC = 0.1 A; VCE = 5 V 12 22 35
IC = 5 A; VCE = 1 V 5.5 8 11
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (64 kHz line ICM = 5.0 A; LC = 260 µH; Cfb = 4.8 nF;
t
s
t
f
30-60 Hz
deflection circuit) VCC = 180 V; I
LB = 0.6 µH; -VBB = 2 V;
(-dIB/dt = 3.33 A/µs)
Turn-off storage time 2.2 tbf µs
Turn-off fall time tbf tbf µs
+ 50v
. Fig.2. Oscilloscope display for V
100R
6V
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
CEOsust
B(end)
IC / mA
250
200
100
0
= 0.9 A;
VCE / V
min
VCEOsust
CEOsust
.
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2727AW
ICsat
I end
B
t
t
t
V
I
I
CE
TRANSISTOR
C
B
DIODE
6.5 us5 us
16 us
Fig.3. Switching times waveforms (64 kHz).
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
t
IBend
-VBB
LB
T.U.T.
Fig.5. Switching times test circuit.
hFE
100
VCE = 5 V
10
+ 150 v nominal
adjust for ICsat
Lc
Cfb
BU2727A/AF
Tmb = 25 C
Tmb = 85 C
- IBM
Fig.4. Switching times definitions.
t
1
0.01 0.1 1 10 100
IC / A
Fig.6. DC current gain. hFE = f (IC)
Parameter T
(Low and high gain)
mb
September 1997 3 Rev 1.100
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