Philips BU2727AF Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2727AF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of high resolution monitors. Designed to withstand V
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
I
P
V
I
t
C
CM
Csat
s
CESM
CEO
tot
CEsat
Collector-emitter voltage peak value VBE = 0 V - 1700 V
Collector-emitter voltage (open base) - 825 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 5.0 A; IB = 0.91 A - 1.0 V
Collector saturation current f = 64 kHz 5.0 - A
Storage time I
= 5.0 A; f = 64 kHz 2.5 3.0 µs
Csat
PINNING - SOT199 PIN CONFIGURATION SYMBOL
pulses up to 1700V.
CES
PIN DESCRIPTION
1 base
case
c
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1700 V
Collector-emitter voltage (open base) - 825 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Base current (DC) - 12 A
Base current peak value - 25 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
ESD LIMITING VALUES
12
3
e
-25A
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
1 Turn-off current.
Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV
1.5 kΩ)
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2727AF
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-hs
R
th j-a
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
V
CEOsust
EBO
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 825 - - V
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
L = 25 mH
V
V
h
h
CEsat
BEsat
FE
FE
Collector-emitter saturation voltage IC = 5.0 A; IB = 0.91 A - - 1.0 V
Base-emitter saturation voltage IC = 5.0 A; IB = 0.91 A - - 1.0 V
DC current gain IC = 0.1 A; VCE = 5 V - 22 -
IC = 5 A; VCE = 1 V 5.5 8 11
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (64 kHz line I
deflection circuit) Cfb = 4.8 nF; VCC = 180 V;
t
s
t
f
Turn-off storage time 2.5 3.0 µs
Turn-off fall time 0.30 0.39 µs
= 5.0 A; LC = 260 µH;
Csat
I
= 0.9 A; LB = 0.6 µH; -VBB = 2 V;
B(end)
(-dIB/dt = 3.33 A/µs)
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2727AF
30-60 Hz
IC / mA
250
200
100R
6V
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
t
t
100
0
VCE / V
Fig.2. Oscilloscope display for V
I
C
I
B
TRANSISTOR
DIODE
min
VCEOsust
CEOsust
ICsat
I end
B
6.5 us5 us
16 us
V
CE
Fig.3. Switching times waveforms (64 kHz).
IBend
LB
T.U.T.
Cfb
-VBB
.
t
t
t
Fig.5. Switching times test circuit.
hFE
100
VCE = 5 V
10
1
0.01 0.1 1 10 100
BU2727A/AF
Ths = 25 C
Ths = 85 C
IC / A
Fig.6. DC current gain. hFE = f (IC)
Parameter T
hs
(Low and high gain)
September 1997 3 Rev 1.100
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