Philips BU2725DF Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2725DF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand V
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
I
I
P
V
I
t
C
CM
Csat
s
CESM
tot
CEsat
Collector-emitter voltage peak value VBE = 0 V - 1700 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 7.0 A; IB = 1.75 A - 1.0 V
Collector saturation current f = 16 kHz 7.0 - A
Storage time I
= 7.0 A; f = 16 kHz 1.5 2 µs
Csat
PINNING - SOT199 PIN CONFIGURATION SYMBOL
pulses up to 1700V.
CES
PIN DESCRIPTION
1 base
case
c
2 collector
b
3 emitter
case isolated
12
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1700 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Base current (DC) - 12 A
Base current peak value - 20 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
ESD LIMITING VALUES
Rbe
e
-9A
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
1 Turn-off current.
Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV
1.5 kΩ)
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2725DF
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-hs
R
th j-a
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
I
I
B
R
V
V
V
h
h
CES
CES
EBO
VEBO
EB
CEsat
BEsat
F
FE
FE
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A - 110 - mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Base-emitter resistance VEB = 7.5 V 70 Ω
Collector-emitter saturation voltage IC = 7.0 A; IB = 1.75 A - - 1.0 V
Base-emitter saturation voltage IC = 7.0 A; IB = 1.75 A 0.78 0.86 0.95 V
Diode forward voltage IF = 7 A 1.4 2.2 V
DC current gain IC = 1 A; VCE = 5 V - 19 -
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
IC = 7 A; VCE = 1 V 3.8 5.8 7.8
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (16 kHz line I
deflection circuit) VCC = 162 V; I
t
s
t
f
Turn-off storage time 1.5 2 µs
Turn-off fall time 0.14 0.3 µs
= 7.0 A; LC = 650 µH; Cfb = 18 nF;
Csat
-VBB = 4 V;
= 1.3 A; LB = 2 µH;
B(end)
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2725DF
IC
IB
VCE
TRANSISTOR
DIODE
26us20us
64us
ICsat
t
IBend
t
t
Fig.1. Switching times waveforms (16 kHz).
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
t
IBend
LB
D.U.T.
-VBB
Fig.3. Switching times test circuit.
hFE
100
VCE = 5 V
10
+ 150 v nominal
adjust for ICsat
Lc
Cfb
Rbe
BU2727D/DF
Ths = 25 C
Ths = 85 C
- IBM
Fig.2. Switching times definitions.
t
1
0.01 0.1 1 10 100
IC / A
Fig.4. DC current gain. hFE = f (IC)
Parameter T
(Low and high gain)
hs
September 1997 3 Rev 1.100
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