Philips BU2720DX Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2720DX
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.
Intended for use in horizontal deflection circuits of colour television receivers. Designed to withstand V
to 1700V.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
I
P
V
I
t
C
CM
Csat
s
CESM
CEO
tot
CEsat
Collector-emitter voltage peak value VBE = 0 V - 1700 V
Collector-emitter voltage (open base) - 825 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 5.5 A; IB = 1.38 A - 1.0 V
Collector saturation current f = 16 kHz 5.5 - A
Storage time I
= 5.5 A; f = 16kHz 7.4 8.5 µs
Csat
PINNING - SOT399 PIN CONFIGURATION SYMBOL
pulses up
CES
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1700 V
Collector-emitter voltage (open base) - 825 V
Collector current (DC) - 10 A
Collector current peak value - 25 A
Base current (DC) - 10 A
Base current peak value - 14 A
Reverse base current average over any 20 ms period - 150 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
Rbe
e
-6A
ESD LIMITING VALUES
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
1 Turn-off current.
September 1997 1 Rev 1.300
Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV
1.5 kΩ)
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2720DX
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-hs
R
th j-a
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
BV
R
V
V
V
h
h
BE
CEsat
BEsat
F
FE
FE
EBO
Collector cut-off current
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Base-emitter resistance VEB = 6 V 65 Ω
Collector-emitter saturation voltage IC = 5.5 A; IB = 1.38 A - - 1.0 V
Base-emitter saturation voltage IC = 5.5 A; IB = 1.38 A - - 1.0 V
Diode forward voltage IF = 5.5 A 1.6 V
DC current gain IC = 1 A; VCE = 5 V 19
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
IC = 5.5 A; VCE = 1 V 4 5.5 7.5
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (16 kHz line I
deflection circuit) Cfb = 15.5 nF; VCC = 125 V;
t
s
t
f
Turn-off storage time 7.4 8.5 µs
Turn-off fall time 0.7 0.9 µs
= 5.5 A; LC = 750 µH;
Csat
I
= 1.2 A; LB = 6 µH; -VBB = 4 V;
B(end)
-IBM = ICM/2
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.300
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2720DX
TRANSISTOR
IC
IB
VCE
DIODE
26us20us
64us
Fig.1. Switching times waveforms.
IC
IB
ts
IBend
tf
ICsat
90 %
10 %
ICsat
IBend
+ 150 v nominal
adjust for ICsat
t
Lc
t
IBend
LB
-VBB
t
D.U.T.
Cfb
Rbe
Fig.3. Switching times test circuit.
hFE
100
VCE = 5 V
t
10
BU2720/22DF
Ths = 25 C
Ths = 85 C
- IBM
Fig.2. Switching times definitions.
t
1
0.01 0.1 1 10 100
IC / A
Fig.4. DC current gain. hFE = f (IC)
Parameter T
(Low and high gain)
hs
September 1997 3 Rev 1.300
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