Philips BU2532AL Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2532AL
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors up to 82 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PINNING - SOT430 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 16 A
Collector current peak value - 40 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 7.0 A; IB = 1.17 A - 5.0 V
Collector saturation current 7 - A
Storage time I
= 7.0 A; I
Csat
= 1 A 1.4 1.8 µs
B(end)
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
heat collector
sink
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 16 A
Collector current peak value - 40 A
Base current (DC) - 10 A
Base current peak value - 15 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
e
-10A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Turn-off current.
Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 35 - K/W
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2532AL
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
V
V
h
h
EBO
CEsat
BEsat
FE
FE
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Base-emitter breakdown voltage IB = 1 mA 7.5 14 - V
Collector-emitter saturation voltage IC = 7.0 A; IB = 1.17 A - - 5.0 V
Base-emitter saturation voltage IC = 7.0 A; IB = 1.17 A - - 1.0 V
DC current gain IC = 1 A; VCE = 5 V - 17 -
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (82 kHz line I
t
s
t
f
deflection dynamic test circuit). VCC = 138 V; I
Turn-off storage time 1.4 1.8 µs
Turn-off fall time 0.06 0.1 µs
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
IC = 7 A; VCE = 5 V 6 9 12.5
= 7.0 A; LC = 100 µH; Cfb = 3 nF;
Csat
B(end)
= 1.0 A
I
Csat
IBend
t
t
t
IC
IB
ts
IBend
tf
VCE
TRANSISTOR
IC
IB
DIODE
5us3.5us
12.2us
Fig.1. Switching times waveforms. Fig.2. Switching times definitions.
ICsat
90 %
10 %
t
t
- IBM
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.100
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