Philips BU2527DX Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2527DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
RBSOA performance.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PINNING - SOT399 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - 5.0 V
Collector saturation current f = 64 kHz 6.0 - A
Storage time I
= 6.0 A; f = 64 kHz 1.7 2.0 µs
Csat
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Base current (DC) - 8 A
Base current peak value - 12 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Rbe
e
-7A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
September 1997 1 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2527DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
V
CEOsust
I
EBO
R
EB
BV
EBO
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Emitter cut-off current VEB = 6.0 V; IC = 0 A - 110 - mA
Base-emitter resistance VEB = 6.0 V - 55 - Ω
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 5.0 V
Base-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 1.1 V
DC current gain IC = 1 A; VCE = 5 V - 11 -
IC = 8 A; VCE = 5 V 5 7 10
Diode forward voltage IF = 8 A - 1.6 2.0 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
V
fr
t
fr
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF
Switching times (64 kHz line I
deflection circuit) Cfb = 5.4 nF; I
= 6.0 A; LC = 170 µH;
Csat
LB = 0.6 µH; -VBB = 4 V;-IBM = 3.6 A
B(end)
= 0.55 A;
Turn-off storage time 1.7 2.0 µs
Turn-off fall time 0.1 0.2 µs
Anti-parallel diode forward recovery IF = 8 A; dIF/dt = 50 A/µs16-V
voltage
Anti-parallel diode forward recovery VF = 5 V 410 - ns
time
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2527DX
TRANSISTOR
DIODE
6.5 us5 us
16 us
V
I
I
CE
C
B
Fig.1. Switching times waveforms.
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
ICsat
I end
B
t
t
+ 150 v nominal
adjust for ICsat
t
Lc
t
LC
Rbe
D.U.T.
Rbe
VCC
T.U.T.
Cfb
.
VCL
CFB
IBend
LB
-VBB
t
Fig.4. Switching times test circuit
IBend
-VBB
LB
- IBM
Fig.2. Switching times definitions.
Fig.5. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V;
LC = 100 - 200 µH; VCL ≤ 1500 V; LB = 3 µH;
CFB = 1 - 2.2 nF; IB(end) = 1 - 2 A
I
F
I
F
10%
t
fr
V
F
time
5 V
V
F
time
Fig.3. Definition of anti-parallel diode Vfr and t
hFE
100
5 V
10
1V
V
fr
1
0.1 1 10 100
fr
Fig.6. Typical DC current gain. hFE = f (IC)
parameter V
CE
BU2525DF
Tj = 25 C
Tj = 125 C
IC / A
September 1997 3 Rev 1.200
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