Philips BU2527AW Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2527AW
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
operation up to 64 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PINNING - SOT429 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - 5.0 V
Collector saturation current 6.0 - A
Storage time I
= 6.0 A; I
csat
= 0.55 A 1.7 2.0 µs
B(end)
PIN DESCRIPTION
c
1 base
2 collector
b
3 emitter
tab collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Base current (DC) - 8 A
Base current peak value - 12 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value
1
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
2
1
3
e
-7A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
1 Turn-off current.
Junction to mounting base - 1.0 K/W
Junction to ambient in free air 45 - K/W
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2527AW
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
EBO
Collector cut-off current
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 0.25 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
Collector-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 5.0 V
Base-emitter saturation voltage IC = 6.0 A; IB = 1.2 A - - 1.3 V
DC current gain IC = 1 A; VCE = 5 V - 10 -
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF
Switching times (64 kHz line ICM = 6.0 A; LC = 170 µH; Cfb = 5.4 nF;
deflection circuit) I
Turn-off storage time 1.7 2.0 µs
Turn-off fall time 0.1 0.2 µs
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 0.25 mA
L = 25 mH
IC = 6 A; VCE = 5 V 5 7 9
= 0.55 A; LB = 0.6 µH;
B(end)
-VBB = 2 V; (-dIB/dt = 3.33 A/µs)
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2527AW
30-60 Hz
IC / mA
250
200
100R
6V
Fig.1. Test circuit for V
100-200R
Horizontal
Oscilloscope
Vertical
1R
.
CEOsust
+ 50v
ICsat
90 %
IC
10 %
IB
ts
IBend
tf
- IBM
Fig.4. Switching times definitions.
+ 150 v nominal
adjust for ICsat
Lc
t
t
100
0
VCE / V
Fig.2. Oscilloscope display for V
TRANSISTOR
DIODE
6.5 us5 us
16 us
V
I
I
CE
C
B
Fig.3. Switching times waveforms.
min
VCEOsust
CEOsust
ICsat
I end
B
IBend
-VBB
.
t
t
t
IBend
-VBB
Fig.6. Test Circuit RBSOA. VCC = 140 V; -VBB = 4 V;
LB
Fig.5. Switching times test circuit
LB
T.U.T.
LC
VCC
T.U.T.
Cfb
.
VCL
CFB
LC = 100 - 200 µH; VCL ≤ 1500 V; LB = 3 µH;
CFB = 1 - 2.2 nF; IB(end) = 1 - 2 A
September 1997 3 Rev 1.100
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