Philips BU2525DX Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to
32 kHz.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
I
C
I
CM
P
tot
V
CEsat
V
CEO
I
Csat
t
s
PINNING - SOT399 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - 5.0 V
Collector-emitter voltage (open base) - 800 V
Collector saturation current 8.0 - A
Storage time I
= 8.0 A; I
Csat
= 1.1 A 3.0 4.0 µs
B(end)
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Base current (DC) - 8 A
Base current peak value - 12 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
Rbe
e
-9A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
September 1997 1 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
R
EB
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 6.0 V; IC = 0 A 72 110 218 mA
Base-emitter resistance VEB = 6.0 V - 55 - Ω
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Collector emitter sustaining voltage IB = O A;IC = 1OO mA; 800 - - V
L= 25 mH
Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 5.0 V
Base-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 1.1 V
DC current gain IC = 1 A; VCE = 5 V - 11 -
IC = 8 A; VCE = 5 V 5 7 9.5
Diode forward voltage IF = 8 A - 1.6 2.0 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
C
c
t
s
t
f
V
fr
t
fr
Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF
Switching times (32 kHz line I
deflection circuit) I
= 8.0 A; LC = 260 µH; Cfb = 13 nF;
Csat
= 1.1 A; LB = 2.5 µH; -VBB = 4 V;
B(end)
(-dIB/dt = 1.6 A/µs)
Turn-off storage time 3.0 4.0 µs
Turn-off fall time 0.2 0.35 µs
Anti-parallel diode forward recovery IF = 8 A; dIF/dt = 50 A/µs16-V
voltage
Anti-parallel diode forward recovery VF = 5 V 410 - ns
time
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.200
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2525DX
TRANSISTOR
IC
IB
VCE
DIODE
13us10us
32us
Fig.1. Switching times waveforms.
90 %
IC
10 %
IB
ts
IBend
tf
ICsat
I
Csat
IBend
+ 150 v nominal
adjust for ICsat
t
Lc
t
5 V
D.U.T.
Rbe
Cfb
.
BU2525DF
Tj = 25 C
Tj = 125 C
IBend
LB
-VBB
t
Fig.4. Switching times test circuit
hFE
100
t
10
1V
t
- IBM
Fig.2. Switching times definitions.
I
F
10%
t
fr
V
F
5 V
I
F
time
V
F
time
Fig.3. Definition of anti-parallel diode Vfr and t
1
0.1 1 10 100
IC / A
Fig.5. Typical DC current gain. hFE = f (IC)
parameter V
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
V
fr
fr
0.6
0.5
0.4
0.1 1 10
Fig.6. Typical base-emitter saturation voltage.
Tj = 25 C
Tj = 125 C
VBEsat = f (IC); parameter IC/I
CE
BU2525AF
IC/IB=
3
4
5
IC / A
B
September 1997 3 Rev 1.200
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