Philips BU2525DW Datasheet

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2525DW

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic
envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CEO

I

C

I

CM

P

tot

V

CEsat

I

Csat

t

s

PINNING - SOT429 PIN CONFIGURATION SYMBOL

Collector-emitter voltage peak value VBE = 0 - 1500 V
Collector-emitter voltage - 800 V

(open base)
Collector current (DC) - 12 A
Collector current peak value - 30 A
Total power dissipation Tmb ≤ 25 ˚C - 125 W
Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - 5.0 V
Collector saturation current 8 - A
Storage time I

= 8.0 A; I

Csat

= 1.1 A 3.0 4.0 µs

B(end)

PIN DESCRIPTION

c

1 base
2 collector

b

3 emitter

tab collector

2

1

3

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

C

I

CM

I

B

I

BM

-I

B(AV)

-I

BM

P

tot

T

stg

T

j

Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Base current (DC) - 8 A
Base current peak value - 12 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value

1

Total power dissipation Tmb ≤ 25 ˚C - 125 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C

THERMAL RESISTANCES

Rbe

e

-9A

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

R

th j-a

1 Turn-off current.

Junction to mounting base - - 1.0 K/W
Junction to ambient in free air 45 - K/W

September 1997 1 Rev 1.100

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2525DW

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES

I

CES

I

EBO

R

EB

BV
V

CEOsust

V

CEsat

V

BEsat

h

FE

h

FE

V

F

EBO

Collector cut-off current

Emitter cut-off current VEB = 6.0 V; IC = 0 A 72 110 218 mA
Base-emitter resistance VEB = 6.0 V - 55 - Ω
Emitter-base breakdown voltage IB = 600 mA 7.5 13.5 - V
Collector emitter-sustaining voltage IB = 0A;IC = 100mA; 800 - - V

Collector-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 5.0 V
Base-emitter saturation voltage IC = 8.0 A; IB = 1.6 A - - 1.1 V
DC current gain IC = 1 A; VCE = 5 V - 11 -

Diode forward voltage IF = 8 A 1.6 2.0 V

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

C

c

t

s

t

f

V

fr

t

fr

Collector capacitance IE = 0 A; VCB = 10 V; f = 1 MHz 145 - pF
Switching times (32 kHz line I

deflection circuit) I
Turn-off storage time 3.0 4.0 µs

Turn-off fall time 0.2 0.35 µs
Anti-parallel diode forward recovery IF = 8 A; dIF/dt = 50 A/µs16V

voltage
Anti-parallel diode forward recovery VF = 5 V 410 ns
time

2

VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C

CESMmax

; - - 2.0 mA

CESMmax

- - 1.0 mA

L= 25 mH

IC = 8 A; VCE = 5 V 5 7 9.5

= 8.0 A; LC = 260 µH; Cfb = 13 nF;

Csat

= 1.1 A; LB = 2.5 µH; -VBB = 4 V;

B(end)

(-dIB/dt = 1.6 A/µs)

VCE

I

TRANSISTOR

IC

IB

DIODE

13us10us

32us

Csat

IBend

t

t

t

IC

IB

ts

IBend

ICsat

90 %

10 %

tf

t

t

- IBM

Fig.1. Switching times waveforms. Fig.2. Switching times definitions.

2 Measured with half sine-wave voltage (curve tracer).

September 1997 2 Rev 1.100

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2525DW

I

F

I

F

10%

t

fr

V

F

time

5 V

V

F

time

Fig.3. Definition of anti-parallel diode Vfr and t

+ 150 v nominal
adjust for ICsat

Lc

IBend

-VBB

LB

D.U.T.

Cfb

Rbe

Fig.4. Switching times test circuit

VBESAT / V

1.2

1.1
1

0.9

0.8

0.7

V

fr

fr

0.6

0.5

0.4

0.1 1 10

Fig.6. Typical base-emitter saturation voltage.

1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1
0

0.1 10

Tj = 25 C
Tj = 125 C

IC / A

VBEsat = f (IC); parameter IC/I

VCESAT / V

IC/IB =

5
4
3

Tj = 25 C
Tj = 125 C

IC / A

BU2525A

IC/IB=

3
4
5

B

BU2525A

1001

Fig.7. Typical collector-emitter saturation voltage.

VCEsat = f (IC); parameter IC/I

B

hFE BU2525D

100

Tj = 25 C

5 V

10

1V

1

0.1 1 10 100

Tj = 125 C

IC / A

Fig.5. Typical DC current gain. hFE = f (IC)

parameter V

CE

VBESAT / V

1.2

1.1

1

0.9

0.8

0.7

0.6

0 1 2 3 4

Tj = 25 C
Tj = 125 C

IB / A

Fig.8. Typical base-emitter saturation voltage.

VBEsat = f (IB); parameter I

BU2525A

IC=

8 A
6 A

5 A
4 A

C

September 1997 3 Rev 1.100