Philips BU2523AX Datasheet
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523AX
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PINNING - SOT399 PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 11 A
Collector current peak value - 29 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 5.5 A; IB = 1.1 A - 5.0 V
Collector saturation current f = 64 kHz 5.5 - A
Fall time I
= 5.5 A; f = 64 kHz 0.15 0.3 µs
Csat
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
Collector-emitter voltage peak value VBE = 0 V - 1500 V
Collector-emitter voltage (open base) - 800 V
Collector current (DC) - 11 A
Collector current peak value - 29 A
Base current (DC) - 7 A
Base current peak value - 10 A
Reverse base current average over any 20 ms period - 175 mA
Reverse base current peak value
1
Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
123
e
-7A
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
1 Turn-off current.
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BU2523AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink
Collector cut-off current
2
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 2.0 mA
CESMmax
- - 1.0 mA
Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 800 - - V
L = 25 mH
Collector-emitter saturation voltage IC = 5.5 A; IB = 1.1 A - - 5.0 V
Base-emitter saturation voltage IC = 5.5 A; IB = 1.1 A 0.80 0.88 0.97 V
DC current gain IC = 1 A; VCE = 5 V - 14 -
IC = 5.5 A; VCE = 5 V 5 8 10.3
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (64 kHz line I
deflection circuit) VCC 145 V; I
t
s
t
f
Turn-off storage time 1.5 2.0 µs
Turn-off fall time 0.15 0.3 µs
ICsat
I end
B
t
t
t
V
I
I
CE
TRANSISTOR
C
B
DIODE
6.5 us5 us
16 us
Fig.1. Switching times waveforms. Fig.2. Switching times definitions.
= 5.5 A; LC = 200 µH; Cfb = 4 nF;
Csat
B(end)
= 0.56 A;
LB = 0.4 µH; -VBB = -4 V; -IBM = 3.3 A
IC
IB
ts
IBend
ICsat
90 %
10 %
tf
t
t
- IBM
2 Measured with half sine-wave voltage (curve tracer).
September 1997 2 Rev 1.100
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