Philips BTA225-800B, BTA225-600B Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BTA225 series B

Three quadrant triacs high
commutation

Product specification September 1997

Philips Semiconductors Product specification

Three quadrant triacs

BTA225 series B

high commutation

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a plastic envelope intended
foruseincircuitswherehighstaticand BTA225- 500B 600B 800B
dynamic dV/dt and high dI/dt can V
occur loads. These devices will voltages
commutate the full rated rms current I
at the maximum rated junction I
temperature, without the aid of a current

DRM

T(RMS)
TSM

snubber.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 main terminal 1
2 main terminal 2
3 gate

tab main terminal 2

Repetitive peak off-state 500 600 800 V
RMS on-state current 25 25 25 A

Non-repetitive peak on-state 190 190 190 A

tab

T1T2

123

G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500 -600 -800

V

DRM

I

T(RMS)

I

TSM

Repetitive peak off-state - 600
voltages

RMS on-state current full sine wave; - 25 A

≤ 91 ˚C

T
Non-repetitive peak full sine wave;
on-state current T

mb

= 25 ˚C prior to

j

surge

1

t = 20 ms - 190 A

2

tI

I
dI

/dt Repetitive rate of rise of ITM = 30 A; IG = 0.2 A; 100 A/µs

T

2

t for fusing t = 10 ms - 180 A2s

on-state current after dI
triggering

I
V
P
P

T
T

GM

GM
GM
G(AV)

stg
j

Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W

Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature

t = 16.7 ms - 209 A

/dt = 0.2 A/µs

G

period

600

1

800 V

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 1997 2 Rev1.200

Philips Semiconductors Product specification

Three quadrant triacs

BTA225 series B

high commutation

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

GT

I

L

I

H

V

T

V

GT

I

D

Thermal resistance full cycle - - 1.0 K/W
junction to mounting base half cycle - - 1.4 K/W
Thermal resistance in free air - 60 - K/W
junction to ambient

Gate trigger current

2

VD = 12 V; IT = 0.1 A

T2+ G+ 2 18 50 mA
T2+ G- 2 21 50 mA
T2- G- 2 34 50 mA

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - 31 60 mA
T2+ G- - 34 90 mA

T2- G- - 30 60 mA
Holding current VD = 12 V; IGT = 0.1 A - 31 60 mA
On-state voltage IT = 30 A - 1.3 1.55 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

= 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V

V

Off-state leakage current VD = V

D

; Tj = 125 ˚C - 0.1 0.5 mA

DRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dV

/dt Critical rate of rise of VDM = 67% V

D

/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I

dI

com

t

gt

off-state voltage exponential waveform; gate open circuit
commutating current without snubber; gate open circuit

Gate controlled turn-on ITM = 30 A; VD = V
time dI

/dt = 5 A/µs

G

; Tj = 125 ˚C; 1000 4000 - V/µs

DRM(max)

= 25 A; - 44 - A/ms

T(RMS)

; IG = 0.1 A; - 2 - µs

DRM(max)

2 Device does not trigger in the T2-, G+ quadrant.

September 1997 3 Rev1.200