Philips BTA216seriesC Datasheet
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA216 series C
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a plastic envelope intended
foruseincircuitswherehighstaticand BTA216- 500C 600C 800C
dynamic dV/dt and high dI/dt can V
DRM
Repetitive peak off-state 500 600 800 V
occur. These devices will commutate voltages
the full rated rms current at the I
T(RMS)
RMS on-state current 16 16 16 A
maximumrated junctiontemperature, I
TSM
Non-repetitive peak on-state 140 140 140 A
without the aid of a snubber. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
Repetitive peak off-state - 500
1
600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 16 A
Tmb ≤ 99 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 140 A
t = 16.7 ms - 150 A
I2tI
2
t for fusing t = 10 ms - 98 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997 1 Rev 1.000
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA216 series C
high commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
R
th j-a
Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ 2 18 35 mA
T2+ G- 2 21 35 mA
T2- G- 2 34 35 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 20 mA
T2+ G- - - 30 mA
T2- G- - - 20 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - - 15 mA
V
T
On-state voltage IT = 20 A - 1.2 1.5 V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
I
D
Off-state leakage current VD = V
DRM(max)
; Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
DRM(max)
; Tj = 125 ˚C; exponential 1000 - V/µs
off-state voltage waveform; gate open circuit
dI
com
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I
T(RMS)
= 16 A; without 3 14 A/ms
commutating current snubber; gate open circuit
t
gt
Gate controlled turn-on ITM = 20 A; VD = V
DRM(max)
; IG = 0.1 A; - 2 µs
time dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
October 1997 2 Rev 1.000
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