Philips BTA216B-800F, BTA216B-800E, BTA216B-600E, BTA216B-600D Datasheet
Philips Semiconductors Objective specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope suitable for
surface mounting, intended for use in BTA216B- 600D -
motor control circuits or with other highly BTA216B- 600E 800E
inductive loads. These devices balance V
the requirements of commutation Repetitive peak off-state 600 800
performance and gate sensitivity. The I
"sensitive gate" E series are intended for I
interfacing with low power drivers, Non-repetitive peak on-state 140 140
DRM
T(RMS)
TSM
including micro controllers. current
PINNING - SOT404 PIN CONFIGURATION SYMBOL
BTA216B- 600F 800F V
voltages A
RMS on-state current 16 16 A
PIN DESCRIPTION
mb
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
V
DRM
Repetitive peak off-state - 600
voltages
I
T(RMS)
I
TSM
RMS on-state current full sine wave; - 16 A
Tmb ≤ 99 ˚C
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge -
t = 20 ms - 140 A
I2tI
2
t for fusing t = 10 ms - 98 A2s
t = 16.7 ms 150 A
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
V
P
P
GM
GM
GM
G(AV)
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
period
T
stg
T
j
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
800 V
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1999 1 Rev 1.100
Philips Semiconductors Objective specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
Thermal resistance minimum footprint, FR4 board - 55 - K/W
junction to ambient
BTA216B- ...D ...E ...F
I
GT
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - - 5 10 25 mA
T2+ G- - - 5 10 25 mA
T2- G- - - 5 10 25 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 15 20 25 mA
T2+ G- - - 25 30 40 mA
T2- G- - - 25 30 40 mA
I
H
V
T
V
GT
Holding current VD = 12 V; IGT = 0.1 A - - 15 25 30 mA
On-state voltage IT = 20 A - 1.2 1.5 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
I
D
Off-state leakage current VD = V
Tj = 125 ˚C
; - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA216B- ...D ...E ...F
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 1.8 3.5 4.5 - - A/ms
com
commutating current I
= 16 A;
T(RMS)
dV
/dt = 20v/µs; gate
com
open circuit
;306070--V/µs
DRM(max)
dI
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 4.3 5.3 6.3 - - A/ms
com
t
gt
commutating current I
Gate controlled turn-on ITM = 20 A; VD = V
time IG = 0.1 A; dIG/dt = 5 A/µs
= 16 A;
T(RMS)
dV
/dt = 0.1v/µs; gate
com
open circuit
DRM(max)
;- - - 2 - µs
2 Device does not trigger in the T2-, G+ quadrant.
October 1999 2 Rev 1.100
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