Philips BTA216-800F, BTA216-800E, BTA216-600F, BTA216-600E, BTA216-600D Datasheet
Philips Semiconductors Objective specification
Three quadrant triacs BTA216 series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope intended for
use in motor control circuits or with other BTA216- 600D -
highly inductive loads. These devices BTA216- 600E 800E
balancetherequirementsofcommutation BTA216- 600F 800F
performance and gate sensitivity. The V
"sensitive gate" E series and "logic level" voltages
D series are intended for interfacing with I
low power drivers, including micro I
controllers. current
DRM
T(RMS)
TSM
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Repetitive peak off-state 600 800 V
RMS on-state current 16 16 A
Non-repetitive peak on-state 140 140 A
PIN DESCRIPTION
tab
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
V
DRM
I
T(RMS)
Repetitive peak off-state - 600
voltages
RMS on-state current full sine wave; - 16 A
Tmb ≤ 99 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 140 A
I2tI
2
t for fusing t = 10 ms - 98 A2s
t = 16.7 ms - 150 A
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; - 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
period
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1999 1 Rev 1.100
Philips Semiconductors Objective specification
Three quadrant triacs BTA216 series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
Thermal resistance in free air - 60 - K/W
junction to ambient
BTA216- ...D ...E ...F
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - - 5 10 25 mA
T2+ G- - - 5 10 25 mA
T2- G- - - 5 10 25 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 15 20 25 mA
T2+ G- - - 25 30 40 mA
T2- G- - - 25 30 40 mA
I
H
V
T
V
GT
Holding current VD = 12 V; IGT = 0.1 A - - 15 25 30 mA
On-state voltage IT = 20 A - 1.2 1.5 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
I
D
Off-state leakage current VD = V
; - 0.1 0.5 mA
DRM(max)
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA216- ...D ...E ...F
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 1.8 3.5 4.5 - - A/ms
com
dI
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 4.3 5.3 6.3 - - A/ms
com
commutating current I
commutating current I
= 16 A;
T(RMS)
dV
/dt = 20v/µs; gate
com
open circuit
= 16 A;
T(RMS)
dV
/dt = 0.1v/µs; gate
com
open circuit
;306070--V/µs
DRM(max)
t
gt
Gate controlled turn-on ITM = 20 A; VD = V
;- - - 2 - µs
DRM(max)
time IG = 0.1 A; dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
October 1999 2 Rev 1.100
Loading...