Philips bta212x DATASHEETS

Philips Semiconductors Preliminary specification
Three quadrant triacs BTA212X series C high commutation

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a full pack, plastic envelope intendedforuse in circuitswherehigh BTA212X- 500C 600C 800C static and dynamic dV/dt and high V
dI/dt can occur. These devices will voltages commutate the full rated rms current I at the maximum rated junction I
T(RMS) TSM
temperature, without the aid of a current snubber.

PINNING - SOT186A PIN CONFIGURATION SYMBOL

Repetitive peak off-state 500 600 800 V RMS on-state current 12 12 12 A
Non-repetitive peak on-state 95 95 95 A
PIN DESCRIPTION
case
1 main terminal 1 2 main terminal 2 3 gate
case isolated
123
G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500 -600 -800
V
I
T(RMS)
I
TSM
Repetitive peak off-state - 500 voltages
RMS on-state current full sine wave; - 12 A
Ths 56 ˚C Non-repetitive peak full sine wave; on-state current Tj = 25 ˚C prior to
1
surge
t = 20 ms - 95 A
I2tI
2
t for fusing t = 10 ms - 45 A2s
t = 16.7 ms - 105 A
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs triggering
I V P P
T T
GM
GM GM G(AV)
stg j
Peak gate current - 2 A Peak gate voltage - 5 V Peak gate power - 5 W Average gate power over any 20 ms - 0.5 W
period Storage temperature -40 150 ˚C Operating junction - 125 ˚C temperature
600
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997 1 Rev 1.000
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA212X series C high commutation

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink
Thermal resistance full or half cycle junction to heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 5.5 K/W Thermal resistance in free air - 55 - K/W junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ 2 - 35 mA T2+ G- 2 - 35 mA T2- G- 2 - 35 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 20 mA T2+ G- - - 30 mA T2- G- - - 20 mA
I
H
V
T
V
GT
I
D
Holding current VD = 12 V; IGT = 0.1 A - - 15 mA On-state voltage IT = 17 A - 1.3 1.6 V Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage waveform; gate open circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I
com
t
gt
commutating current snubber; gate open circuit Gate controlled turn-on ITM = 12 A; VD = V time dIG/dt = 5 A/µs
; Tj = 125 ˚C; exponential 1000 - V/µs
DRM(max)
= 12 A; without 3 14 A/ms
T(RMS)
; IG = 0.1 A; - 2 µs
DRM(max)
2 Device does not trigger in the T2-, G+ quadrant.
October 1997 2 Rev 1.000
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