Philips bta212b DATASHEETS
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA212B series C
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacsinaplastic envelopesuitablefor
surface mounting intended for use in BTA212B- 500C 600C 800C
circuitswherehighstaticanddynamic V
DRM
dV/dtand high dI/dt can occur. These voltages
devices will commutate the full rated I
rms current at the maximum rated I
T(RMS)
TSM
junction temperature, without the aid current
of a snubber.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
Repetitive peak off-state 500 600 800 V
RMS on-state current 12 12 12 A
Non-repetitive peak on-state 95 95 95 A
PIN DESCRIPTION
mb
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
I
T(RMS)
Repetitive peak off-state - 500
voltages
RMS on-state current full sine wave; - 12 A
1
Tmb ≤ 99 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 95 A
I2tI
2
t for fusing t = 10 ms - 45 A2s
t = 16.7 ms - 105 A
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
period
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
600
1
800 V
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997 1 Rev 1.000
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA212B series C
high commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full cycle - - 1.5 K/W
junction to mounting base half cycle - - 2.0 K/W
Thermal resistance in free air - 60 - K/W
junction to ambient
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ 2 - 35 mA
T2+ G- 2 - 35 mA
T2- G- 2 - 35 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 20 mA
T2+ G- - - 30 mA
T2- G- - - 20 mA
Holding current VD = 12 V; IGT = 0.1 A - - 15 mA
On-state voltage IT = 17 A - 1.3 1.6 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage waveform; gate open circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I
com
t
gt
commutating current snubber; gate open circuit
Gate controlled turn-on ITM = 12 A; VD = V
time dIG/dt = 5 A/µs
; Tj = 125 ˚C; exponential 1000 - V/µs
DRM(max)
= 12 A; without 3 14 A/ms
T(RMS)
; IG = 0.1 A; - 2 µs
DRM(max)
2 Device does not trigger in the T2-, G+ quadrant.
October 1997 2 Rev 1.000
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