Philips BTA208X-800F, BTA208X-800E, BTA208X-600F, BTA208X-600E, BTA208X-600D Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BTA208X series D, E and F
Three quadrant triacs guaranteed
commutation
Objective specification October 1999
Philips Semiconductors Objective specification
Three quadrant triacs
BTA208X series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a full pack, plastic envelope
intended foruse in motorcontrol circuits BTA208X- 600D -
or with other highly inductive loads. BTA208X- 600E 800E
These devices balance the BTA208X- 600F 800F
requirements of commutation V
performance and gate sensitivity. The voltages
"sensitivegate"Eseriesand"logiclevel" I
Dseries areintended forinterfacingwith I
low power drivers, including micro current
DRM
T(RMS)
TSM
controllers.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
case isolated
Repetitive peak off-state 600 800 V
RMS on-state current 8 8 A
Non-repetitive peak on-state 65 65 A
case
123
T1T2
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 600
voltages
RMS on-state current full sine wave; - 8 A
T
≤ 73 ˚C
Non-repetitive peak full sine wave;
on-state current T
hs
= 25 ˚C prior to
j
surge
t = 20 ms - 65 A
2
tI
I
/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; 100 A/µs
dI
T
2
t for fusing t = 10 ms - 21 A2s
on-state current after dI
triggering
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
t = 16.7 ms - 72 A
/dt = 0.2 A/µs
G
period
1
800 V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
October 1999 2 Rev1.200
Philips Semiconductors Objective specification
Three quadrant triacs
BTA208X series D, E and F
guaranteed commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.5 K/W
without heatsink compound - - 6.5 K/W
Thermal resistance in free air - 55 - K/W
junction to ambient
BTA208X- ...D ...E ...F
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - - 5 10 25 mA
T2+ G- - - 5 10 25 mA
T2- G- - - 5 10 25 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 15 20 25 mA
T2+ G- - - 25 30 40 mA
T2- G- - - 25 30 40 mA
I
H
V
T
V
GT
I
D
Holding current VD = 12 V; IGT = 0.1 A - - 15 25 30 mA
On-state voltage IT = 10 A - 1.3 1.65 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
= 400 V; IT = 0.1 A; 0.25 0.4 - V
V
D
T
= 125 ˚C
Off-state leakage current VD = V
j
= 125 ˚C
T
j
DRM(max)
2 Device does not trigger in the T2-, G+ quadrant.
; - 0.1 0.5 mA
October 1999 3 Rev1.200
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