Philips BTA208SseriesF, BTA208SseriesE, BTA208SseriesD Datasheet

Philips Semiconductors Product specification

Three quadrant triacs BTA208S series D, E and F
guaranteed commutation

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope suitable for
surface mounting, intended for use in BTA208S- 600D -
motorcontrol circuits or withother highly BTA208S- 600E 800E
inductive loads. These devices balance BTA208S- 600F 800F
the requirements of commutation V

DRM

Repetitive peak off-state 600 800 V
performance and gate sensitivity. The voltages
"sensitivegate"Eseriesand"logiclevel" I

T(RMS)

RMS on-state current 8 8 A
Dseries are intended forinterfacingwith I

TSM

Non-repetitive peak on-state 65 65 A
low power drivers, including micro current
controllers.

PINNING - SOT428 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 MT1
2 MT2
3 gate

tab MT2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-600 -800

V

DRM

Repetitive peak off-state - 600

1

800 V

voltages

I

T(RMS)

RMS on-state current full sine wave; - 8 A

Tmb ≤ 102 ˚C

I

TSM

Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to

surge
t = 20 ms - 65 A
t = 16.7 ms - 72 A

I2tI

2

t for fusing t = 10 ms - 21 A2s

dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; 100 A/µs

on-state current after dIG/dt = 0.2 A/µs
triggering

I

GM

Peak gate current - 2 A

V

GM

Peak gate voltage - 5 V

P

GM

Peak gate power - 5 W

P

G(AV)

Average gate power over any 20 ms - 0.5 W

period

T

stg

Storage temperature -40 150 ˚C

T

j

Operating junction - 125 ˚C
temperature

1

2

3

tab

T1T2

G

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.

February 2000 1 Rev 1.000

Philips Semiconductors Product specification

Three quadrant triacs BTA208S series D, E and F
guaranteed commutation

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

Thermal resistance full cycle - - 2.0 K/W
junction to mounting base half cycle - - 2.4 K/W

R

th j-a

Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BTA208S- ...D ...D ...E ...F

I

GT

Gate trigger current

2

VD = 12 V; IT = 0.1 A

T2+ G+ - 0.8 5 10 25 mA
T2+ G- - 2.0 5 10 25 mA
T2- G- - 3.2 5 10 25 mA

I

L

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - 7.2 15 25 30 mA
T2+ G- - 8.2 25 30 40 mA
T2- G- - 11.0 25 30 40 mA

I

H

Holding current VD = 12 V; IGT = 0.1 A - 5.3 15 25 30 mA

...D, E, F

V

T

On-state voltage IT = 10 A - 1.3 1.65 V

V

GT

Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C

I

D

Off-state leakage current VD = V

DRM(max)

; - 0.1 0.5 mA

Tj = 125 ˚C

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BTA208S- ...D ...E ...F ...D

dVD/dt Critical rate of rise of VDM = 67% V

DRM(max)

; 20607060 -V/µs

off-state voltage Tj = 110 ˚C; exponential

waveform; gate open
circuit

dI

com

/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 1.8 3.5 5 8.5 - A/ms

commutating current I

T(RMS)

= 8 A;

dV

com

/dt = 20V/µs; gate

open circuit

dI

com

/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 5 16 19 100 - A/ms

commutating current I

T(RMS)

= 8 A;

dV

com

/dt = 0.1V/µs; gate

open circuit

...D, E, F

t

gt

Gate controlled turn-on ITM = 12 A; VD = V

DRM(max)

;- - - 2 - µs

time IG = 0.1 A; dIG/dt = 5 A/µs

2 Device does not trigger in the T2-, G+ quadrant.

February 2000 2 Rev 1.000