Philips BTA208S-800F, BTA208S-800E, BTA208S-600F, BTA208S-600D Datasheet
Philips Semiconductors Objective specification
Three quadrant triacs BTA208S series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope suitable for
surface mounting, intended for use in BTA208S- 600D -
motorcontrol circuits or withother highly BTA208S- 600E 800E
inductive loads. These devices balance BTA208S- 600F 800F
the requirements of commutation V
performance and gate sensitivity. The voltages
"sensitivegate"Eseriesand"logiclevel" I
Dseries are intended forinterfacingwith I
low power drivers, including micro current
DRM
T(RMS)
TSM
controllers.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
Repetitive peak off-state 600 800 V
RMS on-state current 8 8 A
Non-repetitive peak on-state 65 65 A
PIN Standard
tab
NUMBER S
1 MT1
T1T2
2 MT2
3 gate
tab MT2
2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 600
voltages
RMS on-state current full sine wave; - 8 A
Tmb ≤ 102 ˚C
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 65 A
I2tI
2
t for fusing t = 10 ms - 21 A2s
t = 16.7 ms - 72 A
dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
period
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
800 V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
October 1999 1 Rev 1.200
Philips Semiconductors Objective specification
Three quadrant triacs BTA208S series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Thermal resistance full cycle - - 2.0 K/W
junction to mounting base half cycle - - 2.4 K/W
Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient
BTA208S- ...D ...E ...F
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - - 5 10 25 mA
T2+ G- - - 5 10 25 mA
T2- G- - - 5 10 25 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 15 20 25 mA
T2+ G- - - 25 30 40 mA
T2- G- - - 25 30 40 mA
I
H
V
T
V
GT
Holding current VD = 12 V; IGT = 0.1 A - - 15 25 30 mA
On-state voltage IT = 10 A - 1.3 1.65 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
I
D
Off-state leakage current VD = V
Tj = 125 ˚C
; - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA208S- ...D ...E ...F
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 1.8 3.5 4.5 - A/ms
com
commutating current I
= 8 A;
T(RMS)
dV
/dt = 20v/µs; gate
com
open circuit
;306070 -V/µs
DRM(max)
dI
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 3.5 4.5 5.5 - A/ms
com
t
gt
commutating current I
Gate controlled turn-on ITM = 12 A; VD = V
time IG = 0.1 A; dIG/dt = 5 A/µs
= 8 A;
T(RMS)
dV
/dt = 0.1v/µs; gate
com
open circuit
DRM(max)
;- - - 2 - µs
2 Device does not trigger in the T2-, G+ quadrant.
October 1999 2 Rev 1.200
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