Philips bta204x DATASHEETS
Philips Semiconductors Product specification
Three quadrant triacs BTA204X series B and C
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated high commutation triacs in SYMBOL PARAMETER MAX. MAX. MAX. UNIT
a plastic full pack envelope intended
foruseincircuits wherehigh staticand BTA204X- 500B 600B 800B
dynamic dV/dt and high dI/dt can BTA204X- 500C 600C 800C
occur. These devices will commutate V
the full rated rms current at the off-state voltages
maximum rated junction temperature I
without the aid of a snubber. I
DRM
T(RMS)
TSM
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Repetitive peak 500 600 800 V
RMS on-state current 4 4 4 A
Non-repetitive peak on-state 25 25 25 A
current
PIN DESCRIPTION
case
1 main terminal 1
2 main terminal 2
3 gate
case isolated
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 500
voltages
RMS on-state current full sine wave; - 4 A
Ths ≤ 92 ˚C
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
1
surge
t = 20 ms - 25 A
I2tI
2
t for fusing t = 10 ms - 3.1 A2s
t = 16.7 ms - 27 A
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
period
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
600
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998 1 Rev 1.000
Philips Semiconductors Product specification
Three quadrant triacs BTA204X series B and C
high commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 5.5 K/W
without heatsink compound - - 7.2 K/W
Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA204X- ...B ...C
I
GT
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - - 50 35 mA
T2+ G- - - 50 35 mA
T2- G- - - 50 35 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 30 20 mA
T2+ G- - - 45 30 mA
T2- G- - - 30 20 mA
I
H
V
T
V
GT
Holding current VD = 12 V; IGT = 0.1 A - - 30 20 mA
On-state voltage IT = 5 A - 1.4 1.7 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
I
D
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
BTA204X- ...B ...C
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; gate open circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I
com
t
gt
commutating current dV
/dt = 20V/µs; gate open circuit
com
Gate controlled turn-on ITM = 12 A; VD = V
time dIG/dt = 5 A/µs
; Tj = 125 ˚C; 1000 1000 - V/µs
DRM(max)
= 4 A; 6 3 - A/ms
T(RMS)
; IG = 0.1 A; - - 2 µs
DRM(max)
2 Device does not trigger in the T2-, G+ quadrant.
December 1998 2 Rev 1.000
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