Philips BTA204W-600F, BTA204W-600E, BTA204W-600D Datasheet
DATA SH EET
Product specification December 1998
DISCRETE SEMICONDUCTORS
BTA204W series D, E and F
Three quadrant triacs guaranteed
commutation
December 1998 2 Rev1.000
Philips Semiconductors Product specification
Three quadrant triacs
guaranteed commutation
BTA204W series D, E and F
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacsin a plasticenvelopesuitable for
surface mounting, intended for use in BTA204W- 500D 600D -
motor control circuits or with other BTA204W- 500E 600E 800E
highly inductive loads. These devices BTA204W- 500F 600F 800F
balance the requirements of V
DRM
Repetitive peak 500 600 800 V
commutation performance and gate off-state voltages
sensitivity. The "sensitive gate" E I
T(RMS)
RMS on-state current 1 1 1 A
series and "logic level" D series are I
TSM
Non-repetitive peak on-state 10 10 10 A
intendedfor interfacingwith lowpower current
drivers, including micro controllers.
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
Repetitive peak off-state - 500
1
600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 1 A
T
sp
≤ 108 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current T
j
= 25 ˚C prior to
surge
t = 20 ms - 10 A
t = 16.7 ms - 11 A
I
2
tI
2
t for fusing t = 10 ms - 0.5 A2s
dI
T
/dt Repetitive rate of rise of ITM = 1.5 A; 100 A/µs
on-state current after I
G
= 0.2 A;
triggering dI
G
/dt = 0.2 A/µs
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G
4
1
23
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998 3 Rev1.000
Philips Semiconductors Product specification
Three quadrant triacs
guaranteed commutation
BTA204W series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
Thermal resistance full or half cycle - - 15 K/W
junction to solder point
R
th j-a
Thermal resistance pcb mounted; minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:2 - 70 - K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA204W- ...D ...E ...F
I
GT
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - - 5 10 25 mA
T2+ G- - - 5 10 25 mA
T2- G- - - 5 10 25 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 6 12 20 mA
T2+ G- - - 9 18 30 mA
T2- G- - - 6 12 20 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - - 6 12 20 mA
V
T
On-state voltage IT = 2 A - 1.2 1.5 V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
V
D
= 400 V; IT = 0.1 A; 0.25 0.4 - V
T
j
= 125 ˚C
I
D
Off-state leakage current VD = V
DRM(max)
; - 0.1 0.5 mA
T
j
= 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA204W- ...D ...E ...F
dV
D
/dt Critical rate of rise of VDM = 67% V
DRM(max)
;20 3050- -V/µs
off-state voltage T
j
= 125 ˚C; exponential
waveform; gate open
circuit
dI
com
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 1.0 2.0 2.5 - - A/ms
commutating current I
T(RMS)
= 1 A;
dV
com
/dt = 20V/µs; gate
open circuit
dI
com
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 5.0 - - - - A/ms
commutating current I
T(RMS)
= 1 A;
dV
com
/dt = 0.1V/µs; gate
open circuit
t
gt
Gate controlled turn-on ITM = 12 A; VD = V
DRM(max)
;- - - 2 - µs
time I
G
= 0.1 A; dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
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