Philips BTA204W-600C, BTA204W-600B Datasheet
Philips Semiconductors Product specification
Three quadrant triacs BTA204W series B and C
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated high commutation triacs in SYMBOL PARAMETER MAX. MAX. MAX. UNIT
a plastic envelope suitable for surface
mounting intended for use in circuits BTA204W- 500B 600B 800B
where high static and dynamic dV/dt BTA204W- 500C 600C 800C
and high dI/dt can occur. These V
DRM
Repetitive peak 500 600 800 V
devices will commutate the full rated off-state voltages
rms current at the maximum rated I
T(RMS)
RMS on-state current 1 1 1 A
junctiontemperaturewithouttheaidof I
TSM
Non-repetitive peak on-state 10 10 10 A
a snubber. current
PINNING - SOT223 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
Repetitive peak off-state - 500
1
600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 1 A
Tsp ≤ 108 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 10 A
t = 16.7 ms - 11 A
I2tI
2
t for fusing t = 10 ms - 0.5 A2s
dIT/dt Repetitive rate of rise of ITM = 1.5 A; 100 A/µs
on-state current after IG = 0.2 A;
triggering dIG/dt = 0.2 A/µs
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G
4
1
23
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998 1 Rev 1.000
Philips Semiconductors Product specification
Three quadrant triacs BTA204W series B and C
high commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
Thermal resistance full or half cycle - - 15 K/W
junction to solder point
R
th j-a
Thermal resistance pcb mounted; minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:2 - 70 - K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA204W- ...B ...C
I
GT
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - - 50 35 mA
T2+ G- - - 50 35 mA
T2- G- - - 50 35 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 30 20 mA
T2+ G- - - 45 30 mA
T2- G- - - 30 20 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - - 30 20 mA
V
T
On-state voltage IT = 2 A - 1.2 1.5 V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
I
D
Off-state leakage current VD = V
DRM(max)
; Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
BTA204W- ...B ...C
dVD/dt Critical rate of rise of VDM = 67% V
DRM(max)
; Tj = 125 ˚C; 1000 1000 - V/µs
off-state voltage exponential waveform; gate open circuit
dI
com
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I
T(RMS)
= 1 A; 6 3 - A/ms
commutating current dV
com
/dt = 20V/µs; gate open circuit
t
gt
Gate controlled turn-on ITM = 12 A; VD = V
DRM(max)
; IG = 0.1 A; - - 2 µs
time dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
December 1998 2 Rev 1.000
Loading...