Philips BTA204S-600C, BTA204S-600B Datasheet
Philips Semiconductors Product specification
Three quadrant triacs BTA204S series B and C
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated high commutation triacs in SYMBOL PARAMETER MAX. MAX. MAX. UNIT
a plastic envelope suitable for surface
mounting intended for use in circuits BTA204S (or BTA204M)- 500B 600B 800B
where high static and dynamic dV/dt BTA204S (or BTA204M)- 500C 600C 800C
and high dI/dt can occur. These V
devices will commutate the full rated off-state voltages
rms current at the maximum rated I
junctiontemperaturewithoutthe aid of I
a snubber. current
DRM
T(RMS)
TSM
PINNING - SOT428 PIN CONFIGURATION SYMBOL
Repetitive peak 500 600 800 V
RMS on-state current 4 4 4 A
Non-repetitive peak on-state 25 25 25 A
BTA204M series B and C
PIN Standard Alternative
tab
NUMBER S M
1 MT1 gate
T1T2
2 MT2 MT2
3 gate MT1
tab MT2 MT2
2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
Repetitive peak off-state - 500
1
voltages
I
T(RMS)
I
TSM
RMS on-state current full sine wave; - 4 A
Tmb ≤ 107 ˚C
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 25 A
I2tI
2
t for fusing t = 10 ms - 3.1 A2s
t = 16.7 ms - 27 A
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
V
P
P
GM
GM
GM
G(AV)
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
period
T
stg
T
j
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
600
1
800 V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998 1 Rev 1.000
Philips Semiconductors Product specification
Three quadrant triacs BTA204S series B and C
high commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full cycle - - 3.0 K/W
junction to mounting base half cycle - - 3.7 K/W
Thermal resistance pcb (FR4) mounted; footprint as in Fig.2 - 75 - K/W
junction to ambient
BTA204 (or BTA204M)- ...B ...C
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - - 50 35 mA
T2+ G- - - 50 35 mA
T2- G- - - 50 35 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 30 20 mA
T2+ G- - - 45 30 mA
T2- G- - - 30 20 mA
Holding current VD = 12 V; IGT = 0.1 A - - 30 20 mA
On-state voltage IT = 5 A - 1.4 1.7 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
BTA204M series B and C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
BTA204S (or BTA204M)- ...B ...C
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; gate open circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I
com
t
gt
commutating current dV
Gate controlled turn-on ITM = 12 A; VD = V
/dt = 20V/µs; gate open circuit
com
time dIG/dt = 5 A/µs
; Tj = 125 ˚C; 1000 1000 - V/µs
DRM(max)
= 4 A; 6 3 - A/ms
T(RMS)
; IG = 0.1 A; - - 2 µs
DRM(max)
2 Device does not trigger in the T2-, G+ quadrant.
December 1998 2 Rev 1.000
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