Philips BTA204-600F, BTA204-600E, BTA204-600D Datasheet

Philips Semiconductors Product specification

Three quadrant triacs BTA204 series D, E and F
guaranteed commutation

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a plastic envelope, intended
for usein motorcontrol circuits or with BTA204- 500D 600D -
other highly inductive loads. These BTA204- 500E 600E 800E
devices balance the requirements of BTA204- 500F 600F 800F
commutation performance and gate V
sensitivity. The "sensitive gate" E off-state voltages
series and "logic level" D series are I
intendedforinterfacingwith low power I
drivers, including micro controllers. current

DRM

T(RMS)
TSM

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Repetitive peak 500 600 800 V
RMS on-state current 4 4 4 A

Non-repetitive peak on-state 25 25 25 A

PIN DESCRIPTION

tab

1 main terminal 1
2 main terminal 2
3 gate

tab main terminal 2

123

G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500 -600 -800

V

DRM

I

T(RMS)

Repetitive peak off-state - 500
voltages

RMS on-state current full sine wave; - 4 A

1

Tmb ≤ 107 ˚C

I

TSM

Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to

surge
t = 20 ms - 25 A

I2tI

2

t for fusing t = 10 ms - 3.1 A2s

t = 16.7 ms - 27 A

dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A; 100 A/µs

on-state current after dIG/dt = 0.2 A/µs

triggering
I
V
P
P

T
T

GM

GM
GM
G(AV)

stg
j

Peak gate current - 2 A

Peak gate voltage - 5 V

Peak gate power - 5 W

Average gate power over any 20 ms - 0.5 W

period
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature

600

1

800 V

T1T2

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.

December 1998 1 Rev 1.000

Philips Semiconductors Product specification

Three quadrant triacs BTA204 series D, E and F
guaranteed commutation

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

GT

I

L

I

H

V

T

V

GT

I

D

Thermal resistance full cycle - - 3.0 K/W
junction to mounting base half cycle - - 3.7 K/W
Thermal resistance in free air - 60 - K/W
junction to ambient

BTA204- ...D ...E ...F

Gate trigger current

2

VD = 12 V; IT = 0.1 A

T2+ G+ - - 5 10 25 mA
T2+ G- - - 5 10 25 mA
T2- G- - - 5 10 25 mA

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - - 6 12 20 mA
T2+ G- - - 9 18 30 mA
T2- G- - - 6 12 20 mA

Holding current VD = 12 V; IGT = 0.1 A - - 6 12 20 mA
On-state voltage IT = 5 A - 1.4 1.7 V

Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; 0.25 0.4 - V

Tj = 125 ˚C
Off-state leakage current VD = V

Tj = 125 ˚C

; - 0.1 0.5 mA

DRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BTA204- ...D ...E ...F

dVD/dt Critical rate of rise of VDM = 67% V

off-state voltage Tj = 125 ˚C; exponential

waveform; gate open

circuit

dI

/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 1.0 2.0 2.5 - - A/ms

com

commutating current I

= 4 A;

T(RMS)

dV

/dt = 20V/µs; gate

com

open circuit

dI

/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 5.0 - - - - A/ms

com

t

gt

commutating current I

= 4 A;

T(RMS)

dV

/dt = 0.1V/µs; gate

com

open circuit
Gate controlled turn-on ITM = 12 A; VD = V
time IG = 0.1 A; dIG/dt = 5 A/µs

2 Device does not trigger in the T2-, G+ quadrant.

;20 3050- -V/µs

DRM(max)

;- - - 2 - µs

DRM(max)

December 1998 2 Rev 1.000