Philips BT168EW, BT168BW Datasheet
Philips Semiconductors Product specification
Thyristors BT168W series
logic level for RCD/ GFI/ LCCB applications
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT
thyristors in a plastic envelope
suitable for surface mounting, BT168 BW DW EW GW
intended for use in Residual Current V
Devices/ Ground Fault Interrupters/ V
Leakage Current Circuit Breakers I
(RCD/ GFI/ LCCB) applications current
where a minimum IGTlimit is needed. I
These devices may be interfaced I
directly to microcontrollers, logic on-state current
integrated circuits and other low
power gate trigger circuits.
PINNING - SOT223 PIN CONFIGURATION SYMBOL
, Repetitive peak 200 400 500 600 V
DRM
RRM
T(AV)
T(RMS)
TSM
off-state voltages
Average on-state 0.6 0.6 0.6 0.6 A
RMS on-state current 1111A
Non-repetitive peak 8888A
PIN DESCRIPTION
1 cathode
4
ak
2 anode
3 gate
tab anode
23
1
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BDEG
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
, V
Repetitive peak off-state - 200140015001600
RRM
voltages
Average on-state current half sine wave; - 0.63 A
Tsp ≤ 112 ˚C
RMS on-state current all conduction angles - 1 A
Non-repetitive peak t = 10 ms - 8 A
on-state current t = 8.3 ms - 9 A
half sine wave;
I2tI
2
t for fusing t = 10 ms - 0.32 A2s
Tj = 25 ˚C prior to surge
dIT/dt Repetitive rate of rise of ITM = 2 A; IG = 10 mA; - 50 A/µs
on-state current after dIG/dt = 100 mA/µs
triggering
I
V
V
P
P
T
T
GM
GM
RGM
GM
G(AV)
stg
j
Peak gate current - 1 A
Peak gate voltage - 5 V
Peak reverse gate voltage - 5 V
Peak gate power - 2 W
Average gate power over any 20 ms period - 0.1 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Thyristors BT168W series
logic level for RCD/ GFI/ LCCB Applications
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
ID, I
R
Thermal resistance - - 15 K/W
junction to solder point
Thermal resistance pcb mounted, minimum footprint - 156 - K/W
junction to ambient pcb mounted, pad area as in fig:14 - 70 - K/W
Gate trigger current VD = 12 V; IT = 10 mA; gate open circuit 20 50 200 µA
Latching current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -26mA
Holding current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -25mA
On-state voltage IT = 2 A - 1.35 1.5 V
Gate trigger voltage VD = 12 V; IT = 10 mA; gate open circuit - 0.5 0.8 V
VD = V
gate open circuit
Off-state leakage current VD = V
; IT = 10 mA; Tj = 125 ˚C; 0.2 0.3 - V
DRM(max)
DRM(max)
; VR = V
; Tj = 125 ˚C; - 0.05 0.1 mA
RRM(max)
RGK = 1 kΩ
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; RGK = 1 kΩ
t
gt
Gate controlled turn-on ITM = 2 A; VD = V
time dIG/dt = 0.1 A/µs
t
q
Circuit commutated VD = 67% V
turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
DRM(max)
; Tj = 125 ˚C; - 25 - V/µs
DRM(max)
; IG = 10 mA; - 2 - µs
DRM(max)
; Tj = 125 ˚C; - 100 - µs
September 1997 2 Rev 1.100
Philips Semiconductors Product specification
Thyristors BT168W series
logic level for RCD/ GFI/ LCCB Applications
Ptot / W
1
conduction
form
angle
factor
degrees
0.8
0.6
0.4
0.2
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
a
30
4
60
2.8
90
2.2
120
1.9
180
1.57
BT169W
2.2
2.8
4
IF(AV) / A
Fig.1. Maximum on-state dissipation, P
average on-state current, I
factor = I
ITSM / A
1000
100
T(RMS)
BT169
T(AV)
/ I
T(AV)
Tsp(max) / C
a = 1.57
1.9
, where a = form
tot
.
110
113
116
119
122
125
, versus
ITSM / A
10
8
6
4
2
0
1 10 100 1000
Number of half cycles at 50Hz
BT169
I
I
T
Tj initial = 25 C max
TSM
time
T
Fig.4. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
2
1.5
1
, versus number of cycles, for
TSM
BT134W
10
I
1
10us 100us 1ms
I
T
TSM
time
T
Tj initial = 25 C max
T / s
10ms
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width tp, for
TSM
sinusoidal currents, tp ≤ 10ms.
IT(RMS) / A
1.2
1
0.8
0.6
0.4
0.2
0
-50 0 50 100 150
Fig.3. Maximum permissible rms current I
versus solder point temperature Tsp.
BT134W
Tsp / C
112 C
T(RMS)
,
0.5
0
0.01 0.1 1 10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Tsp ≤ 112˚C.
VGT(Tj)
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
BT151
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997 3 Rev 1.100
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