Philips BT152-800R, BT152-600R, BT152-400R Datasheet
Philips Semiconductors Product specification
Thyristors BT152 series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glasspassivatedthyristorsinaplastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT152- 400R 600R 800R
bidirectional blocking voltage V
capability and high thermal cycling V
performance. Typical applications I
include motor control, industrial and I
domestic lighting, heating and static I
switching. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
, Repetitive peak off-state 450 650 800 V
DRM
RRM
T(AV)
T(RMS)
TSM
voltages
Average on-state current 13 13 13 A
RMS on-state current 20 20 20 A
Non-repetitive peak on-state 200 200 200 A
PIN DESCRIPTION
1 cathode
tab
ak
2 anode
3 gate
tab anode
123
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-400R -600R -800R
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
Repetitive peak off-state - 4501650
voltages
Average on-state current half sine wave; Tmb ≤ 103 ˚C - 13 A
RMS on-state current all conduction angles - 20 A
Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 200 A
I2tI
2
t for fusing t = 10 ms - 200 A2s
t = 8.3 ms - 220 A
dIT/dt Repetitive rate of rise of ITM = 50 A; IG = 0.2 A; - 200 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
V
V
P
P
T
T
GM
GM
RGM
GM
G(AV)
stg
j
Peak gate current - 5 A
Peak gate voltage - 5 V
Peak reverse gate voltage - 5 V
Peak gate power - 20 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
800 V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 1997 1 Rev 1.200
Philips Semiconductors Product specification
Thyristors BT152 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
ID, I
R
Thermal resistance - - 1.1 K/W
junction to mounting base
Thermal resistance in free air - 60 - K/W
junction to ambient
Gate trigger current VD = 12 V; IT = 0.1 A - 3 32 mA
Latching current VD = 12 V; IGT = 0.1 A - 25 80 mA
Holding current VD = 12 V; IGT = 0.1 A - 15 60 mA
On-state voltage IT = 40 A - 1.4 1.75 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
Off-state leakage current VD = V
VD = V
; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
DRM(max)
DRM(max)
; VR = V
; Tj = 125 ˚C - 0.2 1.0 mA
RRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform gate open circuit
t
gt
t
q
Gate controlled turn-on VD = V
time ITM = 40 A
DRM(max)
Circuit commutated VD = 67% V
turn-off time ITM = 50 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω
DRM(max)
; Tj = 125 ˚C; 200 300 - V/µs
DRM(max)
; IG = 0.1 A; dIG/dt = 5 A/µs; - 2 - µs
; Tj = 125 ˚C; - 70 - µs
March 1997 2 Rev 1.200
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