Philips BT151X User Guide

BT151X series

Thyristors

Rev. 04 — 9 June 2004 Product data sheet

1. Product profile

1.1 General description

Passivated thyristors in a SOT186A full pack plastic package.

1.2 Features

■ High thermal cycling performance ■ Isolated mounting base.

■ High bidirectional blocking voltage

capability

1.3 Applications

■ Motor control ■ Industrial and domestic lighting, heating

and static switching.

1.4 Quick reference data

■ V

■ V

■ V

DRM
DRM
DRM

, V
, V
, V

≤ 800 V (BT151X-800) ■ I

RRM

≤ 650 V (BT151X-650) ■ I

RRM

≤ 500 V (BT151X-500) ■ I

RRM

T(RMS)
T(AV)
TSM

≤ 12 A

≤ 7.5 A

≤ 120 A.

2. Pinning information

Table 1: Discrete pinning

Pin Description Simplified outline Symbol

1 cathode (k)
2 anode (a)
3 gate (g)
mb mounting base; isolated

SOT186A (TO-220)

mb

1

23

sym037

Philips Semiconductors

BT151X series

Thyristors

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

BT151X-500 - plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
BT151X-650

3 lead TO-220 ‘full pack’

SOT186A

BT151X-800

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

, V

V

DRM

RRM

I

T(AV)

I

T(RMS)

I

TSM

2

tI

I

/dt repetitive rate of rise of on-state

dI

T

I

GM

V

RGM

P

GM

P

G(AV)

T

stg

T

j

repetitive peak off-state voltage

[1]

BT151X-500
BT151X-650

- 500 V

[1]

- 650 V

BT151X-800 - 800 V

average on-state current half sinewave;

T

≤ 69 °C; Figure 1

hs

RMS on-state current all conduction angles;

- 7.5 A

-12A

Figure 4 and Figure 5

non-repetitive peak on-state current half sinewave;

T

=25°C prior to

j

surge;

Figure 2 and

Figure 3

t=10ms - 120 A
t = 8.3 ms - 132 A

2

t for fusing t = 10 ms - 72 A2s

current after triggering

ITM=20A;IG=50mA;
dI

/dt 50 mA/µs

G

-50A/µs

peak gate current - 2 A
peak reverse gate voltage - 5 V
peak gate power - 5 W
average gate power over any 20 ms period - 0.5 W
storage temperature −40 +150 °C
junction temperature - 125 °C

[1] Although not recommended, off-state voltages up to 800 V may be applied without damage,butthethyristor may switch to the on-state.

The rate of rise of current should not exceed 15 A/µs.

9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 04 — 9 June 2004 2 of 11

Philips Semiconductors

BT151X series

Thyristors

15

P

tot

(W)

10

5

0

0 8642

a = form factor = I

T(RMS)/IT(AV)

2.2

2.8

4

conduction

angle

(degrees)

30
60

90
120
180

.

1.9

form

factor

a
4

2.8

2.2

1.9

1.57

I

Fig 1. Total power dissipation as a function of average on-state current; maximum values.

160

I

TSM

(A)

120

I

T

Tj initial = 25 °C max

T(AV)

t

p

α

(A)

001aaa961

a =

1.57

001aaa957

I

TSM

t

57.5

T

hs(max)

(°C)

80

102.5

125

80

40

0

1 10

10

2

10

n

3

f = 50 Hz.

Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values.

9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 04 — 9 June 2004 3 of 11

Philips Semiconductors

BT151X series

Thyristors

3

10

I

TSM

(A)

2

10

10

−5

10

dlT/dt limit

I

T

Tj initial = 25 °C max

−4

10

−3

10

tp (s)

tp≤ 10 ms.

Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.

I

T(RMS)

(A)

25

20

001aaa955

I

T(RMS)

(A)

16

12

t

p

001aaa956

I

TSM

t

001aaa960

−2

10

15

10

5

0

−2

10

−1

surge duration (s)

10110

f = 50 Hz; Ths≤ 87 °C.

Fig 4. RMS on-state current as a function of surge

duration; maximum values.

8

4

0

−50 150100050
Ths (°C)

Fig 5. RMS on-state current as a function of heatsink

temperature; maximum values.

9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 04 — 9 June 2004 4 of 11

Philips Semiconductors

BT151X series

Thyristors

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Typ Max Unit

R

th(j-hs)

R

th(j-a)

thermal resistance from
junction to heatsink

thermal resistance from
junction to ambient

Figure 6

with heatsink compound - 4.5 K/W
without heatsink compound - 6.5 K/W
in free air 55 - K/W

10

Z

th(j-hs)

(K/W)

1

−1

10

−2

10

−3

10

−5

10

(1) Without heatsink compound.
(2) With heatsink compound.

−4

10

(1)

(2)

P

−3

10

−2

10

−1

11010

001aaa964

t

p

δ =

T

t

p

T

t

tp (s)

Fig 6. Transient thermal impedance as a function of pulse width.

6. Isolation characteristics

Table 5: Isolation limiting values and characteristics

Ths=25°C unless otherwise specified

Symbol Parameter Conditions Typ Max Unit

V

isol

RMS isolation voltagefromall
three terminals to external
heatsink

C

isol

capacitance from pin 2 to
external heatsink

f = 50 to 60 Hz; sinusoidal

- 2500 V
waveform; R.H. ≤ 65%; clean and
dust free

f = 1 MHz 10 - pF

9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 04 — 9 June 2004 5 of 11

Philips Semiconductors

BT151X series

Thyristors

7. Characteristics

Table 6: Characteristics

Tj=25°C unless otherwise stated

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

I

GT

I

L

I

H

V

T

V

GT

, I

I

D

R

Dynamic characteristics

/dt critical rate of rise of

dV

D

t

gt

t

q

gate trigger current VD= 12 V; IT= 0.1 A; Figure 8 - 2 15 mA
latching current VD= 12 V; IGT= 0.1 A; Figure 10 - 1040mA
holding current VD= 12 V; IGT= 0.1 A; Figure 11 - 7 20 mA
on-state voltage IT=23A;Figure 9 - 1.4 1.75 V
gate trigger voltage VD= 12 V; IT= 0.1 A; Figure 7 - 0.6 1.5 V

off-state leakage
current

off-state voltage

V

D=VDRM(max)

T

= 125 °C

j

VD=V

DRM(max)

T

= 125 °C

j

VDM= 67% V

; IT= 0.1 A;

; VR=V

DRM(max);Tj

exponential waveform;

RRM(max)

= 125 °C;

Figure 12

;

0.25 0.4 - V

- 0.1 0.5 mA

gate open circuit 50 130 - V/µs

= 100 Ω 200 1000 - V/µs

R

GK

gate controlled
turn-on time

circuit commuted
turn-on time

ITM= 40 A; VD=V
I

= 0.1 A; dIG/dt = 5 A/µs

G

VD= 67% V
I

= 20 A; VR=25V;

TM

dI

/dt=30A/µs;

TM

dV

/dt=50V/µs; RGK= 100 Ω

D

DRM(max)

DRM(max)

; Tj= 125 °C;

;

-2-µs

-70-µs

1.6

V

)

GT (Tj

V

(25 °C)

GT

1.2

0.8

0.4

−50 150100050

Fig 7. Normalized gate trigger voltage as a function of

junction temperature.

9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 04 — 9 June 2004 6 of 11

001aaa953

Tj (°C)

3

I

(Tj)

GT

I

(25 °C)

GT

2

1

0

−50 150100050

Fig 8. Normalized gate trigger current as a function of

junction temperature.

001aaa952

Tj (°C)

Philips Semiconductors

BT151X series

Thyristors

30

I

T

(A)

20

10

0

021.50.5 1

001aaa959

(3)(2)(1)

VT (V)

3

I

)

L (Tj

I

(25 °C)

L

2

1

0

−50 150100050

001aaa951

Tj (°C)

VO= 1.06 V.

RS= 0.0304 Ω.
(1) Tj= 125 °C; typical values.
(2) Tj= 125 °C; maximum values.
(3) Tj=25°C; maximum values.

Fig 9. On-state current characteristics. Fig 10. Normalized latching current as a function of

junction temperature.

3

I

)

H (Tj

I

(25 °C)

H

2

1

0

−50 150100050

001aaa950

Tj (°C)

Fig 11. Normalized holding current as a function of

junction temperature.

8. Package information

4

10

dVD/dt

(V/µs)

3

10

2

10

10

0 15010050

(1)

(2)

001aaa949

(°C)

T

j

(1) RGK= 100 Ω.
(2) Gate open circuit.

Fig 12. Critical rate of rise of off-state voltage as a

function of junction temperature; minimum
values.

Epoxy meets requirements of UL94 V-0 at1⁄8 inch.

9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 04 — 9 June 2004 7 of 11

Philips Semiconductors

9. Package outline

Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack'

BT151X series

Thyristors

SOT186A

E
P

q

D

1

D

L

2

b

L

1

b

2

23

1

b

e

e

1

T

L

w M

1

mounting

base

A

A

1

j

K

Q

c

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

A

A

b

UNIT

mm

Notes

1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.

2. Both recesses are ∅ 2.5 × 0.8 max. depth

OUTLINE

VERSION

SOT186A 3-lead TO-220F

4.6

4.0

1

2.9

2.5

b

1

1.1

0.9

0.9

0.7

IEC JEDEC JEITA

b

1.4

1.0

c

2

0.7

0.4

D

15.8

15.2

D

1

6.5

6.3

REFERENCES

E

10.3

9.7

2.54

e

e

j

2.7

1.7

K

0.6

0.4

1

5.08

14.4

13.5

L

3.30

2.79

1

(1)

L

2

max.

3.2

3

3.0

EUROPEAN

PROJECTION

2.6

2.3

(2)

qQPL

T

3.0

2.5 0.4

2.6

ISSUE DATE

02-03-12
02-04-09

w

Fig 13. Package outline.

9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 04 — 9 June 2004 8 of 11

Philips Semiconductors

BT151X series

Thyristors

10. Revision history

Table 7: Revision history

Document ID Release date Data sheet status Change notice Order number Supersedes

BT151X_SERIES_4 20040609 Product specification - 9397 750 13162 BT151X_SERIES_3
Modifications:

BT151X_SERIES_3 20030901 Product specification - - BT151X_SERIES_2
BT151X_SERIES_2 19990601 Product specification - - BT151X_SERIES_1
BT151X_SERIES_1 19970901 Product specification - - -

• The format of this specification has be redesigned to comply with Philips Semiconductors’ new

presentation and information standard

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Product data sheet Rev. 04 — 9 June 2004 9 of 11

Philips Semiconductors

11. Data sheet status

BT151X series

Thyristors

Level Data sheet status

I Objective data Development This data sheet contains data from the objective specification for product development. Philips

II Preliminary data Qualification This data sheetcontains data fromthe preliminary specification.Supplementary datawill be published

III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Definitions

Short-form specification — The data in a short-form specification is

extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation orwarranty that such applications will be suitable for
the specified use without further testing or modification.

[2] [3]

Definition

Semiconductors reserves the right to change the specification in any manner without notice.

at a laterdate. Philips Semiconductors reservesthe right to change thespecification without notice, in
order to improve the design and supply the best possible product.

right to makechanges at any time inorder to improve thedesign, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, andmakes norepresentations orwarranties that theseproducts are
free frompatent, copyright, ormask work rightinfringement, unlessotherwise
specified.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [e-mail]

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Product data sheet Rev. 04 — 9 June 2004 10 of 11

Philips Semiconductors

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5

6 Isolation characteristics . . . . . . . . . . . . . . . . . . 5

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Package information . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 10

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

14 Contact information . . . . . . . . . . . . . . . . . . . . 10

BT151X series

Thyristors

© Koninklijke Philips Electronics N.V. 2004

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believedto be accurate andreliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.

Document order number: 9397 750 13162

Published in The Netherlands

Date of release: 9 June 2004