Philips BT151X User Guide

BT151X series

Thyristors

Rev. 04 — 9 June 2004 Product data sheet

1. Product proﬁle

1.1 General description

Passivated thyristors in a SOT186A full pack plastic package.

1.2 Features

■ High thermal cycling performance ■ Isolated mounting base.

■ High bidirectional blocking voltage

capability

1.3 Applications

■ Motor control ■ Industrial and domestic lighting, heating

and static switching.

1.4 Quick reference data

■ V

DRM DRM DRM

, V , V , V

≤ 800 V (BT151X-800) ■ I

RRM

≤ 650 V (BT151X-650) ■ I

RRM

≤ 500 V (BT151X-500) ■ I

RRM

T(RMS) T(AV) TSM

≤ 12 A

≤ 7.5 A

≤ 120 A.

2. Pinning information

Table 1: Discrete pinning

Pin Description Simpliﬁed outline Symbol

1 cathode (k) 2 anode (a) 3 gate (g) mb mounting base; isolated

SOT186A (TO-220)

mb

1

23

sym037

Philips Semiconductors

BT151X series

Thyristors

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

BT151X-500 - plastic single-ended package; isolated heatsink mounted; 1 mounting hole; BT151X-650

3 lead TO-220 ‘full pack’

SOT186A

BT151X-800

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

, V

V

DRM

RRM

I

T(AV)

I

T(RMS)

I

TSM

2

tI

I

/dt repetitive rate of rise of on-state

dI

T

I

GM

V

RGM

P

GM

P

G(AV)

T

stg

T

j

repetitive peak off-state voltage

[1]

BT151X-500 BT151X-650

- 500 V

[1]

- 650 V

BT151X-800 - 800 V

average on-state current half sinewave;

T

≤ 69 °C; Figure 1

hs

RMS on-state current all conduction angles;

- 7.5 A

-12A

Figure 4 and Figure 5

non-repetitive peak on-state current half sinewave;

T

=25°C prior to

j

surge;

Figure 2 and

Figure 3

t=10ms - 120 A t = 8.3 ms - 132 A

2

t for fusing t = 10 ms - 72 A2s

current after triggering

ITM=20A;IG=50mA; dI

/dt 50 mA/µs

G

-50A/µs

peak gate current - 2 A peak reverse gate voltage - 5 V peak gate power - 5 W average gate power over any 20 ms period - 0.5 W storage temperature −40 +150 °C junction temperature - 125 °C

[1] Although not recommended, off-state voltages up to 800 V may be applied without damage,butthethyristor may switch to the on-state.

The rate of rise of current should not exceed 15 A/µs.

Product data sheet Rev. 04 — 9 June 2004 2 of 11

Philips Semiconductors

BT151X series

Thyristors

15

P

tot

(W)

10

5

0

0 8642

a = form factor = I

T(RMS)/IT(AV)

2.2

2.8

4

conduction

angle

(degrees)

30 60

90 120 180

.

1.9

form

factor

a 4

2.8

2.2

1.9

1.57

I

Fig 1. Total power dissipation as a function of average on-state current; maximum values.

160

I

TSM

(A)

120

I

T

Tj initial = 25 °C max

T(AV)

t

p

α

(A)

001aaa961

a =

1.57

001aaa957

I

TSM

t

57.5

T

hs(max)

(°C)

80

102.5

125

80

40

0

1 10

10

2

10

n

3

f = 50 Hz.

Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values.

Product data sheet Rev. 04 — 9 June 2004 3 of 11

Philips Semiconductors

BT151X series

Thyristors

3

10

I

TSM

(A)

2

10

−5

10

dlT/dt limit

I

T

Tj initial = 25 °C max

−4

10

−3

10

tp (s)

tp≤ 10 ms.

Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.

I

T(RMS)

(A)

25

20

001aaa955

I

T(RMS)

(A)

16

12

t

p

001aaa956

I

TSM

t

001aaa960

−2

10

15

10

5

0

−2

10

−1

surge duration (s)

10110

f = 50 Hz; Ths≤ 87 °C.

Fig 4. RMS on-state current as a function of surge

duration; maximum values.

8

4

0

−50 150100050 Ths (°C)

Fig 5. RMS on-state current as a function of heatsink

temperature; maximum values.

Product data sheet Rev. 04 — 9 June 2004 4 of 11