Philips BT151X User Guide
BT151X series
Thyristors
Rev. 04 — 9 June 2004 Product data sheet
1. Product profile
1.1 General description
Passivated thyristors in a SOT186A full pack plastic package.
1.2 Features
■ High thermal cycling performance ■ Isolated mounting base.
■ High bidirectional blocking voltage
capability
1.3 Applications
■ Motor control ■ Industrial and domestic lighting, heating
and static switching.
1.4 Quick reference data
■ V
■ V
■ V
DRM
DRM
DRM
, V
, V
, V
≤ 800 V (BT151X-800) ■ I
RRM
≤ 650 V (BT151X-650) ■ I
RRM
≤ 500 V (BT151X-500) ■ I
RRM
T(RMS)
T(AV)
TSM
≤ 12 A
≤ 7.5 A
≤ 120 A.
2. Pinning information
Table 1: Discrete pinning
Pin Description Simplified outline Symbol
1 cathode (k)
2 anode (a)
3 gate (g)
mb mounting base; isolated
SOT186A (TO-220)
mb
1
23
sym037
Philips Semiconductors
BT151X series
Thyristors
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
BT151X-500 - plastic single-ended package; isolated heatsink mounted; 1 mounting hole;
BT151X-650
3 lead TO-220 ‘full pack’
SOT186A
BT151X-800
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
, V
V
DRM
RRM
I
T(AV)
I
T(RMS)
I
TSM
2
tI
I
/dt repetitive rate of rise of on-state
dI
T
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
repetitive peak off-state voltage
[1]
BT151X-500
BT151X-650
- 500 V
[1]
- 650 V
BT151X-800 - 800 V
average on-state current half sinewave;
T
≤ 69 °C; Figure 1
hs
RMS on-state current all conduction angles;
- 7.5 A
-12A
Figure 4 and Figure 5
non-repetitive peak on-state current half sinewave;
T
=25°C prior to
j
surge;
Figure 2 and
Figure 3
t=10ms - 120 A
t = 8.3 ms - 132 A
2
t for fusing t = 10 ms - 72 A2s
current after triggering
ITM=20A;IG=50mA;
dI
/dt 50 mA/µs
G
-50A/µs
peak gate current - 2 A
peak reverse gate voltage - 5 V
peak gate power - 5 W
average gate power over any 20 ms period - 0.5 W
storage temperature −40 +150 °C
junction temperature - 125 °C
[1] Although not recommended, off-state voltages up to 800 V may be applied without damage,butthethyristor may switch to the on-state.
The rate of rise of current should not exceed 15 A/µs.
9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 04 — 9 June 2004 2 of 11
Philips Semiconductors
BT151X series
Thyristors
15
P
tot
(W)
10
5
0
0 8642
a = form factor = I
T(RMS)/IT(AV)
2.2
2.8
4
conduction
angle
(degrees)
30
60
90
120
180
.
1.9
form
factor
a
4
2.8
2.2
1.9
1.57
I
Fig 1. Total power dissipation as a function of average on-state current; maximum values.
160
I
TSM
(A)
120
I
T
Tj initial = 25 °C max
T(AV)
t
p
α
(A)
001aaa961
a =
1.57
001aaa957
I
TSM
t
57.5
T
hs(max)
(°C)
80
102.5
125
80
40
0
1 10
10
2
10
n
3
f = 50 Hz.
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values.
9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 04 — 9 June 2004 3 of 11
Philips Semiconductors
BT151X series
Thyristors
3
10
I
TSM
(A)
2
10
10
−5
10
dlT/dt limit
I
T
Tj initial = 25 °C max
−4
10
−3
10
tp (s)
tp≤ 10 ms.
Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values.
I
T(RMS)
(A)
25
20
001aaa955
I
T(RMS)
(A)
16
12
t
p
001aaa956
I
TSM
t
001aaa960
−2
10
15
10
5
0
−2
10
−1
surge duration (s)
10110
f = 50 Hz; Ths≤ 87 °C.
Fig 4. RMS on-state current as a function of surge
duration; maximum values.
8
4
0
−50 150100050
Ths (°C)
Fig 5. RMS on-state current as a function of heatsink
temperature; maximum values.
9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 04 — 9 June 2004 4 of 11
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