Philips BT151F-800R, BT151F-650R, BT151F-500R Datasheet
Philips Semiconductors Product specification
Thyristors BT151F series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated thyristors in a full SYMBOL PARAMETER MAX. MAX. MAX. UNIT
pack, plastic envelope, intended for
use in applications requiring high BT151F- 500 650 800
bidirectional blocking voltage V
DRM
, Repetitive peak off-state 500 650 800 V
capability and high thermal cycling V
RRM
voltages
performance. Typical applications I
T(AV)
Average on-state current 5.7 5.7 5.7 A
include motor control, industrial and I
T(RMS)
RMS on-state current 9 9 9 A
domestic lighting, heating and static I
TSM
Non-repetitive peak on-state 100 100 100 A
switching. current
PINNING - SOT186 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 cathode
2 anode
3 gate
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -650 -800
V
DRM
, V
RRM
Repetitive peak off-state - 50016501800 V
voltages
I
T(AV)
Average on-state current half sine wave; Ths ≤ 87 ˚C - 5.7 A
I
T(RMS)
RMS on-state current all conduction angles - 9 A
I
TSM
Non-repetitive peak half sine wave; Tj = 125 ˚C prior
on-state current to surge; with reapplied V
DRM(max)
t = 10 ms - 100 A
t = 8.3 ms - 110 A
I2tI
2
t for fusing t = 10 ms - 50 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 50 mA; - 50 A/µs
on-state current after dIG/dt = 50 mA/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
V
RGM
Peak reverse gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
ak
g
123
case
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 1996 1 Rev 1.100
Philips Semiconductors Product specification
Thyristors BT151F series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
Thermal resistance with heatsink compound - - 4.5 K/W
junction to heatsink without heatsink compound - - 6.5 K/W
R
th j-a
Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current VD = 12 V; IT = 0.1 A - 2 15 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - 7 20 mA
V
T
On-state voltage IT = 23 A - 1.4 1.75 V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
VD = V
DRM(max)
; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
ID, I
R
Off-state leakage current VD = V
DRM(max)
; VR = V
RRM(max)
; Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
DRM(max)
; Tj = 125 ˚C;
off-state voltage exponential waveform
Gate open circuit 50 130 - V/µs
RGK = 100 Ω 200 1000 - V/µs
t
gt
Gate controlled turn-on ITM = 40 A; VD = V
DRM(max)
; IG = 0.1 A; - 2 - µs
time dIG/dt = 5 A/µs
t
q
Circuit commutated VD = 67% V
DRM(max)
; Tj = 125 ˚C; - 70 - µs
turn-off time ITM = 20 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω
February 1996 2 Rev 1.100
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