Philips BT150S-800R, BT150S-600R, BT150S-500R, BT150M-800R, BT150M-600R Datasheet
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Philips Semiconductors Product specification
Thyristors BT150S series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT
thyristors in a plastic envelope,
suitable for surface mounting, BT150S (or BT150M)- 500R 600R 800R
intended for use in general purpose V
switching and phase control V
applications. These devices are I
intended to be interfaced directly to I
microcontrollers, logic integrated I
circuits and other low power gate current
trigger circuits.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
, Repetitive peak off-state 500 600 800 V
DRM
RRM
T(AV)
T(RMS)
TSM
voltages
Average on-state current 2.5 2.5 2.5 A
RMS on-state current 4 4 4 A
Non-repetitive peak on-state 35 35 35 A
BT150M series
PIN Standard Alternative
tab
NUMBER S M
1 cathode gate
ak
2 anode anode
3 gate cathode
tab anode anode
2
1
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
, V
Repetitive peak off-state - 5001600
RRM
voltages
Average on-state current half sine wave; Tmb ≤ 111 ˚C - 2.5 A
RMS on-state current all conduction angles - 4 A
Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 35 A
-500R -600R -800R
I2tI
2
t for fusing t = 10 ms - 6.1 A2s
t = 8.3 ms - 38 A
dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/µs
on-state current after dIG/dt = 50 mA/µs
triggering
I
V
V
P
P
T
T
GM
GM
RGM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak reverse gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125
temperature
1
2
800 V
˚C
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
October 1997 1 Rev 1.100
Philips Semiconductors Product specification
Thyristors BT150S series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
ID, I
R
Thermal resistance - - 3.0 K/W
junction to mounting base
Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient
Gate trigger current VD = 12 V; IT = 0.1 A - 15 200 µA
Latching current VD = 12 V; IGT = 0.1 A - 0.17 10 mA
Holding current VD = 12 V; IGT = 0.1 A - 0.10 6 mA
On-state voltage IT = 5 A - 1.23 1.8 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.4 1.5 V
VD = V
Off-state leakage current VD = V
; IT = 0.1 A; Tj = 110 ˚C 0.1 0.2 - V
DRM(max)
DRM(max)
; VR = V
; Tj = 125 ˚C - 0.1 0.5 mA
RRM(max)
BT150M series
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; RGK = 100 Ω
t
gt
t
q
Gate controlled turn-on ITM = 10 A; VD = V
time dIG/dt = 0.2 A/µs
Circuit commutated VD = 67% V
turn-off time VR = 10 V; dITM/dt = 10 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
DRM(max)
; Tj = 125 ˚C; - 50 - V/µs
DRM(max)
; IG = 5 mA; - 2 - µs
DRM(max)
; Tj = 125 ˚C; ITM = 8 A; - 100 - µs
October 1997 2 Rev 1.100
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