Philips BT149B, BT149G, BT149E, BT149D Datasheet
Philips Semiconductors Product specification
Thyristors BT149 series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. MAX. UNIT
thyristors in a plastic envelope,
intended for use in general purpose BT149 B D E G
switching and phase control V
applications. These devices are V
intended to be interfaced directly to I
microcontrollers, logic integrated current
circuits and other low power gate I
trigger circuits. I
PINNING - TO92 variant PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
, Repetitive peak 200 400 500 600 V
DRM
RRM
T(AV)
T(RMS)
TSM
off-state voltages
Average on-state 0.5 0.5 0.5 0.5 A
RMS on-state current 0.8 0.8 0.8 0.8 A
Non-repetitive peak 8888A
on-state current
1 cathode
ak
2 gate
3 anode
321
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
, V
Repetitive peak off-state - 200140015001600
RRM
voltages
Average on-state current half sine wave; - 0.5 A
T
≤ 83 ˚C
RMS on-state current all conduction angles - 0.8 A
lead
Non-repetitive peak t = 10 ms - 8 A
on-state current t = 8.3 ms - 9 A
half sine wave;
BDEG
I2tI
2
t for fusing t = 10 ms - 0.32 A2s
Tj = 25 ˚C prior to surge
dIT/dt Repetitive rate of rise of ITM = 2 A; IG = 10 mA; - 50 A/µs
on-state current after dIG/dt = 100 mA/µs
triggering
I
V
V
P
P
T
T
GM
GM
RGM
GM
G(AV)
stg
j
Peak gate current - 1 A
Peak gate voltage - 5 V
Peak reverse gate voltage - 5 V
Peak gate power - 2 W
Average gate power over any 20 ms period - 0.1 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997 1 Rev 1.200
Philips Semiconductors Product specification
Thyristors BT149 series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-lead
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
ID, I
R
Thermal resistance - - 60 K/W
junction to lead
Thermal resistance pcb mounted; lead length = 4mm - 150 - K/W
junction to ambient
Gate trigger current VD = 12 V; IT = 10 mA; gate open circuit - 50 200 µA
Latching current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -26mA
Holding current VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ -25mA
On-state voltage IT = 1 A - 1.2 1.35 V
Gate trigger voltage VD = 12 V; IT = 10 mA; gate open circuit - 0.5 0.8 V
VD = V
; IT = 10 mA; Tj = 125 ˚C; 0.2 0.3 - V
DRM(max)
gate open circuit
Off-state leakage current VD = V
RGK = 1 kΩ
DRM(max)
; VR = V
; Tj = 125 ˚C; - 0.05 0.1 mA
RRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; RGK = 1 kΩ
t
gt
t
q
Gate controlled turn-on ITM = 2 A; VD = V
time dIG/dt = 0.1 A/µs
Circuit commutated VD = 67% V
turn-off time ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
DRM(max)
; Tj = 125 ˚C; - 25 - V/µs
DRM(max)
; IG = 10 mA; - 2 - µs
DRM(max)
; Tj = 125 ˚C; - 100 - µs
September 1997 2 Rev 1.200
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