Philips BT148S-600Z, BT148M-600Z Datasheet
Philips Semiconductors Product specification
Thyristors BT148S-600Z
logic level
BT148M-600Z
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glasspassivated, sensitive gate thyristorin SYMBOL PARAMETER MAX. UNIT
a plastic envelope, suitable for surface
mounting, intended for use in general BT148S (or BT148M)- 600Z
purpose switching and phase control V
DRM
, Repetitive peak off-state 600 V
applications. These devices feature a V
RRM
voltage
gate-cathode reverse breakdown voltage I
T(AV)
Average on-state current 2.5 A
specification. They can be interfaced I
T(RMS)
RMS on-state current 4 A
directly to microcontrollers, logic integrated I
TSM
Non-repetitive peak on-state 35 A
circuits and other low power gate trigger current
circuits.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
PIN Standard Alternative
NUMBER S M
1 cathode gate
2 anode anode
3 gate cathode
tab anode anode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
, V
RRM
Repetitive peak off-state voltage - 600
1
V
I
T(AV)
Average on-state current half sine wave; Tmb ≤ 111 ˚C - 2.5 A
I
T(RMS)
RMS on-state current all conduction angles - 4 A
I
TSM
Non-repetitive peak on-state half sine wave; Tj = 25 ˚C prior to surge
current t = 10 ms - 35 A
t = 8.3 ms - 38 A
I2tI
2
t for fusing t = 10 ms - 6.1 A2s
dIT/dt Repetitive rate of rise of on-state ITM = 10 A; IG = 50 mA; - 50 A/µs
current after triggering dIG/dt = 50 mA/µs
I
GM
Peak gate current - 2 A
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction temperature - 125
2
˚C
1
2
3
tab
ak
g
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.
September 1997 1 Rev 1.100
Philips Semiconductors Product specification
Thyristors BT148S-600Z
logic level
BT148M-600Z
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance - - 3.0 K/W
junction to mounting base
R
th j-a
Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current VD = 12 V; IT = 0.1 A - 15 200 µA
I
L
Latching current VD = 12 V; IGT = 0.1 A - 0.17 10 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - 0.10 6 mA
V
T
On-state voltage IT = 5 A - 1.23 1.8 V
V
GR
Gate-cathode reverse IG = -20 µA14--V
breakdown voltage IG = -150 µA--20V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.4 1.5 V
VD = V
DRM(max)
; IT = 0.1 A; Tj = 110 ˚C 0.1 0.2 - V
ID, I
R
Off-state leakage current VD = V
DRM(max)
; VR = V
RRM(max)
; Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
DRM(max)
; Tj = 125 ˚C; - 50 - V/µs
off-state voltage exponential waveform; RGK = 100 Ω
t
gt
Gate controlled turn-on ITM = 10 A; VD = V
DRM(max)
; IG = 5 mA; - 2 - µs
time dIG/dt = 0.2 A/µs
t
q
Circuit commutated VD = 67% V
DRM(max)
; Tj = 125 ˚C; ITM = 8 A; - 100 - µs
turn-off time VR = 10 V; dITM/dt = 10 A/µs;
dVD/dt = 2 V/µs; RGK = 1 kΩ
September 1997 2 Rev 1.100
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