Philips BT139B-800H, BT139B-600H, BT139B-500H Datasheet
Philips Semiconductors Product specification
Triacs BT139B series H
high noise immunity
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope suitable for surface
mounting, intended for use in BT139B- 500H 600H 800H
applications requiring high noise V
DRM
immunity in addition to high, voltages
bidirectional blocking voltage I
capability and thermal cycling I
T(RMS)
TSM
performance. Typical applications current
include motor control, industrial
lighting, heating and static switching.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
Repetitive peak off-state 500 600 800 V
RMS on-state current 16 16 16 A
Non-repetitive peak on-state 140 140 140 A
PIN DESCRIPTION
mb
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
Repetitive peak off-state - 5001600
voltages
I
T(RMS)
I
TSM
RMS on-state current full sine wave; Tmb ≤ 99 ˚C - 16 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 140 A
I2tI
2
t for fusing t = 10 ms - 98 A2s
t = 16.7 ms - 150 A
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
-500 -600 -800
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
1
800 V
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
March 1997 1 Rev 1.000
Philips Semiconductors Product specification
Triacs BT139B series H
high noise immunity
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
Thermal resistance minimum footprint, FR4 board - 55 - K/W
junction to ambient
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ 10 14 50 mA
T2+ G- 10 17 50 mA
T2- G- 10 18 50 mA
T2- G+ 10 40 100 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 10 60 mA
T2+ G- - 25 90 mA
T2- G- - 12 60 mA
T2- G+ - 14 90 mA
Holding current VD = 12 V; IGT = 0.1 A - 8 60 mA
On-state voltage IT = 20 A - 1.2 1.6 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; gate open circuit
dV
/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; I
com
t
gt
commutating voltage dI
Gate controlled turn-on ITM = 20 A; VD = V
/dt = 7.2 A/ms; gate open circuit
com
time dIG/dt = 5 A/µs
; Tj = 125 ˚C; 200 500 - V/µs
DRM(max)
= 16 A; 10 20 - V/µs
T(RMS)
; IG = 0.1 A; - 2 - µs
DRM(max)
March 1997 2 Rev 1.000
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