Philips BT137X-600E, BT137X-500E, BT137X-800E Datasheet
Philips Semiconductors Product specification
Triacs BT137X series E
sensitive gate
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a full pack, plastic envelope,
intended for use in general purpose BT137X- 500E 600E 800E
bidirectional switching and phase V
DRM
control applications, where high voltages
sensitivity is required in all four I
quadrants. I
T(RMS)
TSM
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Repetitive peak off-state 500 600 800 V
RMS on-state current 8 8 8 A
Non-repetitive peak on-state 65 65 65 A
current
PIN DESCRIPTION
case
1 main terminal 1
2 main terminal 2
3 gate
case isolated
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
Repetitive peak off-state - 5001600
voltages
I
T(RMS)
I
TSM
RMS on-state current full sine wave; Ths ≤ 73 ˚C - 8 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 65 A
I2tI
2
t for fusing t = 10 ms - 21 A2s
t = 16.7 ms - 71 A
dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
-500 -600 -800
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
September 1997 1 Rev 1.200
Philips Semiconductors Product specification
Triacs BT137X series E
sensitive gate
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.5 K/W
without heatsink compound - - 6.5 K/W
Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 2.5 10 mA
T2+ G- - 4.0 10 mA
T2- G- - 5.0 10 mA
T2- G+ - 11 25 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 3.0 25 mA
T2+ G- - 14 35 mA
T2- G- - 3.0 25 mA
T2- G+ - 4.0 35 mA
I
H
V
T
V
GT
Holding current VD = 12 V; IGT = 0.1 A - 2.5 20 mA
On-state voltage IT = 10 A - 1.3 1.65 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
I
D
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; gate open circuit
t
gt
Gate controlled turn-on VD = V
time ITM = 12 A
DRM(max)
; Tj = 125 ˚C; - 50 - V/µs
DRM(max)
; IG = 0.1 A; dIG/dt = 5 A/µs; - 2 - µs
September 1997 2 Rev 1.200
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