Philips BT137S-500E, BT137M-800E, BT137M-600E, BT137S-800E Datasheet
Philips Semiconductors Product specification
Triacs BT137S series E
sensitive gate
BT137M series E
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a plastic envelope, suitable
forsurfacemounting,intendedforuse BT137S (or BT137M)- 500E 600E 800E
in general purpose bidirectional V
DRM
Repetitive peak off-state 500 600 800 V
switching and phase control voltages
applications, where high sensitivity is I
T(RMS)
RMS on-state current 8 8 8 A
required in all four quadrants. I
TSM
Non-repetitive peak on-state 65 65 65 A
current
PINNING - SOT428 PIN CONFIGURATION SYMBOL
PIN Standard Alternative
NUMBER S M
1 MT1 gate
2 MT2 MT2
3 gate MT1
tab MT2 MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
Repetitive peak off-state - 50016001800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; Tmb ≤ 102 ˚C - 8 A
I
TSM
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 65 A
t = 16.7 ms - 71 A
I2tI
2
t for fusing t = 10 ms - 21 A2s
dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
1
2
3
tab
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
October 1997 1 Rev 1.200
Philips Semiconductors Product specification
Triacs BT137S series E
sensitive gate
BT137M series E
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance full cycle - - 2.0 K/W
junction to mounting base half cycle - - 2.4 K/W
R
th j-a
Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 2.5 10 mA
T2+ G- - 4.0 10 mA
T2- G- - 5.0 10 mA
T2- G+ - 11 25 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 3.0 25 mA
T2+ G- - 14 35 mA
T2- G- - 3.0 25 mA
T2- G+ - 4.0 35 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - 2.5 20 mA
V
T
On-state voltage IT = 10 A - 1.3 1.65 V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
I
D
Off-state leakage current VD = V
DRM(max)
; Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
DRM(max)
; Tj = 125 ˚C; - 50 - V/µs
off-state voltage exponential waveform; gate open circuit
t
gt
Gate controlled turn-on ITM = 12 A; VD = V
DRM(max)
; IG = 0.1 A; - 2 - µs
time dIG/dt = 5 A/µs
October 1997 2 Rev 1.200
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