Philips BT136X-600E, BT136X-500E, BT136X-800E Datasheet

Philips Semiconductors Product specification
Triacs BT136X series E sensitive gate
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a full pack plastic envelope, intended for use in general purpose BT136X- 500E 600E 800E bidirectional switching and phase V
control applications, where high voltages sensitivity is required in all four I quadrants. I
T(RMS) TSM
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Repetitive peak off-state 500 600 800 V RMS on-state current 4 4 4 A
Non-repetitive peak on-state 25 25 25 A current
PIN DESCRIPTION
case
1 main terminal 1 2 main terminal 2 3 gate
case isolated
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
Repetitive peak off-state - 5001600 voltages
I
T(RMS)
I
TSM
RMS on-state current full sine wave; Ths 92 ˚C - 4 A Non-repetitive peak full sine wave; Tj = 25 ˚C prior to on-state current surge
t = 20 ms - 25 A
I2tI
2
t for fusing t = 10 ms - 3.1 A2s
t = 16.7 ms - 27 A
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs triggering T2+ G+ - 50 A/µs
I V P P T T
GM
GM GM
G(AV) stg j
Peak gate current - 2 A Peak gate voltage - 5 V Peak gate power - 5 W Average gate power over any 20 ms period - 0.5 W Storage temperature -40 150 ˚C Operating junction - 125 ˚C temperature
-500 -600 -800
T2+ G- - 50 A/µs T2- G- - 50 A/µs T2- G+ - 10 A/µs
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
August 1997 1 Rev 1.200
Philips Semiconductors Product specification
Triacs BT136X series E sensitive gate
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink
Thermal resistance full or half cycle junction to heatsink with heatsink compound - - 5.5 K/W
without heatsink compound - - 7.2 K/W Thermal resistance in free air - 55 - K/W junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 2.5 10 mA T2+ G- - 4.0 10 mA T2- G- - 5.0 10 mA T2- G+ - 11 25 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 3.0 15 mA T2+ G- - 10 20 mA T2- G- - 2.5 15 mA T2- G+ - 4.0 20 mA
I
H
V
T
V
GT
Holding current VD = 12 V; IGT = 0.1 A - 2.2 15 mA On-state voltage IT = 5 A - 1.4 1.70 V Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
I
D
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; gate open circuit
t
gt
Gate controlled turn-on ITM = 6 A; VD = V time dIG/dt = 5 A/µs
; Tj = 125 ˚C; - 50 - V/µs
DRM(max)
; IG = 0.1 A; - 2 - µs
DRM(max)
August 1997 2 Rev 1.200
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