Datasheet BT136S D Datasheet (Philips)

查询BT136S series D供应商
Philips Semiconductors Product specification
Triacs BT136S series D logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated, sensitive gate triacs in a SYMBOL PARAMETER MAX. UNIT plastic envelope suitable for surface mounting, intended for use in general BT136S - 600D purpose bidirectional switching and V phase control applications. These I devices are intended to be interfaced I directly to microcontrollers, logic Non-repetitive peak on-state current
integrated circuits and other low power gate trigger circuits.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
Repetitive peak off-state 600 V
voltages 4 A
RMS on-state current 25 A
PIN DESCRIPTION
1 MT1
tab
T1T2
2 MT2 3 gate
tab MT2
2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
I
T(RMS)
I
TSM
Repetitive peak off-state - 600 V voltages
RMS on-state current full sine wave; Tmb 107 ˚C - 4 A Non-repetitive peak full sine wave; Tj = 25 ˚C prior to on-state current surge
t = 20 ms - 25 A
I2tI
2
t for fusing t = 10 ms - 3.1 A2s
t = 16.7 ms - 27 A
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs triggering T2+ G+ - 50 A/µs
I V P P T T
GM
GM GM G(AV) stg j
Peak gate current - 2 A Peak gate voltage - 5 V Peak gate power - 5 W Average gate power over any 20 ms period - 0.5 W Storage temperature -40 150 ˚C Operating junction - 125 ˚C temperature
T2+ G- - 50 A/µs T2- G- - 50 A/µs T2- G+ - 10 A/µs
-600
June 2001 1 Rev 1.300
Philips Semiconductors Product specification
Triacs BT136S series D logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full cycle - - 3.0 K/W junction to mounting base half cycle - - 3.7 K/W Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W junction to ambient
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 2.0 5 mA T2+ G- - 2.5 5 mA T2- G- - 2.5 5 mA T2- G+ - 5.0 10 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 1.6 10 mA T2+ G- - 4.5 15 mA T2- G- - 1.2 10 mA
T2- G+ - 2.2 15 mA Holding current VD = 12 V; IGT = 0.1 A - 1.2 10 mA On-state voltage IT = 5 A - 1.4 1.70 V Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; RGK = 1 k
t
gt
Gate controlled turn-on ITM = 6 A; VD = V time dIG/dt = 5 A/µs
; Tj = 125 ˚C; - 5 - V/µs
DRM(max)
; IG = 0.1 A; - 2 - µs
DRM(max)
June 2001 2 Rev 1.300
Philips Semiconductors Product specification
Triacs BT136S series D logic level
Ptot / W Tmb(max) / C
8 7 6 5 4 3 2 1 0
012345
1
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
100
T2- G+ quadrant
, where α = conduction angle.
T(RMS)
I
T
Tj initial = 25 C max
dI /dt limit
T
120 90
60 30
tot
T
= 180
, versus rms
I
TSM
time
101 104 107 110 113 116 119 122 125
IT(RMS) / A
5
4
3
2
1
0
-50 0 50 100 150 Tmb / C
Fig.4. Maximum permissible rms current I
versus mounting base temperature Tmb.
IT(RMS) / A
12
10
8
6
4
2
107 C
T(RMS)
,
10
10us 100us 1ms 10ms 100ms
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp 20ms.
ITSM / A
30
25
20
15
10
5
0
1 10 100 1000
, versus pulse width tp, for
TSM
BT136
I
T
T
Tj initial = 25 C max
Number of cycles at 50Hz
I
TSM
time
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
0
0.01 0.1 1 10 surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Tmb 107˚C.
VGT(Tj)
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
June 2001 3 Rev 1.300
Philips Semiconductors Product specification
Triacs BT136S series D logic level
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150 Tj / C
T2+ G+ T2+ G­T2- G­T2- G+
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
2.5
2
1.5
1
IT / A
12
Tj = 125 C
Tj = 25 C
10
Vo = 1.27 V
Rs = 0.091 ohms
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3
typ max
VT / V
Fig.10. Typical and maximum on-state characteristic.
Zth j-mb (K/W)
10
unidirectional
bidirectional
1
t
0.1
P
p
D
0.5
0
-50 0 50 100 150 Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150 Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
t
0.01 10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Fig.11. Transient thermal impedance Z
pulse width tp.
dVD/dt (V/us)
1000
100
10
1
0 50 100 150
Tj / C
th j-mb
, versus
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
June 2001 4 Rev 1.300
Philips Semiconductors Product specification
Triacs BT136S series D logic level
MECHANICAL DATA
Dimensions in mm Net Mass: 1.1 g
2.285 (x2)
MOUNTING INSTRUCTIONS
Dimensions in mm
1
seating plane
6.73 max
tab
2
3
1.1
6.22 max
0.5 min
0.8 max (x2)
2.38 max
0.93 max
10.4 max
0.3
0.5
Fig.13. SOT428 : centre pin connected to tab.
7.0
5.4
4 min
4.6
0.5
Notes
1. Plastic meets UL94 V0 at 1/8".
7.0
2.15
2.5
4.57
1.5
Fig.14. SOT428 : minimum pad sizes for surface mounting.
June 2001 5 Rev 1.300
Philips Semiconductors Product specification
Triacs BT136S series D logic level
DEFINITIONS
DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS
STATUS
Objective data Development This data sheet contains data from the objective specification for
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
1
STATUS
2
product development. Philips Semiconductors reserves the right to change the specification in any manner without notice
Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in ordere to improve the design and supply the best possible product
Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1 Please consult the most recently issued datasheet before initiating or completing a design. 2 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
June 2001 6 Rev 1.300
Loading...