Philips BT136S-800F, BT136S-800, BT136S-600G, BT136S-600F, BT136S-500G Datasheet
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Philips Semiconductors Product specification
Triacs BT136S series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, suitable for surface
mounting, intended for use in BT136S (or BT136M)- 500 600 800
applications requiring high BT136S (or BT136M)- 500F 600F 800F
bidirectional transient and blocking BT136S (or BT136M)- 500G 600G 800G
voltage capability and high thermal V
cycling performance. Typical voltages
applications include motor control, I
industrial and domestic lighting, I
heating and static switching. current
DRM
T(RMS)
TSM
PINNING - SOT428 PIN CONFIGURATION SYMBOL
Repetitive peak off-state 500 600 800 V
RMS on-state current 4 4 4 A
Non-repetitive peak on-state 25 25 25 A
BT136M series
PIN Standard Alternative
tab
NUMBER S M
1 MT1 gate
T1T2
2 MT2 MT2
3 gate MT1
tab MT2 MT2
2
1
3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
Repetitive peak off-state - 5001600
voltages
I
T(RMS)
I
TSM
RMS on-state current full sine wave; Tmb ≤ 107 ˚C - 4 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 25 A
I2tI
2
t for fusing t = 10 ms - 3.1 A2s
t = 16.7 ms - 27 A
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
-500 -600 -800
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
1
800 V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
October 1997 1 Rev 1.100
Philips Semiconductors Product specification
Triacs BT136S series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full cycle - - 3.0 K/W
junction to mounting base half cycle - - 3.7 K/W
Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient
BT136S- ... ...F ...G
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 20 20 30 mA
T2+ G- - 16 30 30 45 mA
T2- G- - 5 20 20 30 mA
T2- G+ - 7 30 30 45 mA
Holding current VD = 12 V; IGT = 0.1 A - 5 15 15 30 mA
On-state voltage IT = 5 A - 1.4 1.70 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
Off-state leakage current VD = V
Tj = 125 ˚C
; - 0.1 0.5 mA
DRM(max)
BT136M series
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT136S (or BT136M)- ... ...F ...G
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dV
/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 50 - V/µs
com
t
gt
commutating voltage I
= 4 A;
T(RMS)
dI
/dt = 1.8 A/ms; gate
com
open circuit
Gate controlled turn-on ITM = 6 A; VD = V
time IG = 0.1 A; dIG/dt = 5 A/µs
; 100 50 200 250 - V/µs
DRM(max)
;- - - 2 -µs
DRM(max)
October 1997 2 Rev 1.100
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