Philips BT136B E Technical data

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Philips Semiconductors Product specification

Triacs BT136B series E
sensitive gate

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated, sensitive gate triacs in a SYMBOL PARAMETER MAX. MAX. UNIT
plastic envelope suitable for surface
mounting, intended for use in general BT136B- 600E 800E
purpose bidirectional switching and V

DRM

phase control applications, where voltages
high sensitivity is required in all four I
quadrants. I

T(RMS)
TSM

PINNING - SOT404 PIN CONFIGURATION SYMBOL

Repetitive peak off-state 600 800 V
RMS on-state current 4 4 A

Non-repetitive peak on-state 25 25 A
current

PIN DESCRIPTION

mb

1 main terminal 1
2 main terminal 2
3 gate

mb main terminal 2

2

13

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-600 -800

V

DRM

I

T(RMS)

I

TSM

Repetitive peak off-state - 600
voltages

RMS on-state current full sine wave; Tmb ≤ 107 ˚C - 4 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge

t = 20 ms - 25 A

I2tI

2

t for fusing t = 10 ms - 3.1 A2s

t = 16.7 ms - 27 A

dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A;

on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs

I
V
P
P
T
T

GM

GM
GM
G(AV)
stg
j

Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature

T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs

1

800 V

T1T2

G

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.

June 2001 1 Rev 1.300

Philips Semiconductors Product specification

Triacs BT136B series E
sensitive gate

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

GT

I

L

I

H

V

T

V

GT

I

D

Thermal resistance full cycle - - 3.0 K/W
junction to mounting base half cycle - - 3.7 K/W
Thermal resistance minimum footprint, FR4 board - 55 - K/W
junction to ambient

Gate trigger current VD = 12 V; IT = 0.1 A

T2+ G+ - 2.5 10 mA
T2+ G- - 4.0 10 mA
T2- G- - 5.0 10 mA
T2- G+ - 11 25 mA

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - 3.0 15 mA
T2+ G- - 10 20 mA
T2- G- - 2.5 15 mA

T2- G+ - 4.0 20 mA
Holding current VD = 12 V; IGT = 0.1 A - 2.2 15 mA
On-state voltage IT = 5 A - 1.4 1.70 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V

Off-state leakage current VD = V

; Tj = 125 ˚C - 0.1 0.5 mA

DRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dVD/dt Critical rate of rise of VDM = 67% V

off-state voltage exponential waveform; gate open circuit

t

gt

Gate controlled turn-on ITM = 6 A; VD = V
time dIG/dt = 5 A/µs

; Tj = 125 ˚C; - 50 - V/µs

DRM(max)

; IG = 0.1 A; - 2 - µs

DRM(max)

June 2001 2 Rev 1.300

Philips Semiconductors Product specification

Triacs BT136B series E
sensitive gate

Ptot / W Tmb(max) / C

8
7
6
5
4
3
2
1
0

012345

1

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P

on-state current, I

ITSM / A

1000

100

T2- G+ quadrant

, where α = conduction angle.

T(RMS)

I

T

Tj initial = 25 C max

dI /dt limit

T

120
90

60
30

tot

T

= 180

, versus rms

I

TSM

time

101
104
107
110
113
116
119
122
125

IT(RMS) / A

5

4

3

2

1

0

-50 0 50 100 150
Tmb / C

Fig.4. Maximum permissible rms current I

versus mounting base temperature Tmb.

IT(RMS) / A

12

10

8

6

4

2

107 C

T(RMS)

,

10

10us 100us 1ms 10ms 100ms

T / s

Fig.2. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, tp ≤ 20ms.

ITSM / A

30

25

20

15

10

5

0

1 10 100 1000

, versus pulse width tp, for

TSM

BT136

I

T

T

Tj initial = 25 C max

Number of cycles at 50Hz

I

TSM

time

Fig.3. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, f = 50 Hz.

, versus number of cycles, for

TSM

0

0.01 0.1 1 10
surge duration / s

Fig.5. Maximum permissible repetitive rms on-state

current I

VGT(25 C)

1.6

1.4

1.2

1

0.8

0.6

0.4

-50 0 50 100 150

, versus surge duration, for sinusoidal

T(RMS)

currents, f = 50 Hz; Tmb ≤ 107˚C.

VGT(Tj)

Tj / C

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

June 2001 3 Rev 1.300

Philips Semiconductors Product specification

Triacs BT136B series E
sensitive gate

IGT(Tj)

IGT(25 C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150
Tj / C

T2+ G+
T2+ G­T2- G­T2- G+

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj)

IL(25 C)

3

2.5

2

1.5

1

IT / A

12

Tj = 125 C

Tj = 25 C

10

Vo = 1.27 V

Rs = 0.091 ohms

8

6

4

2

0

0 0.5 1 1.5 2 2.5 3

typ max

VT / V

Fig.10. Typical and maximum on-state characteristic.

Zth j-mb (K/W)

10

unidirectional

bidirectional

1

t

0.1

P

p

D

0.5

0

-50 0 50 100 150
Tj / C

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature Tj.

IH(Tj)

IH(25C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150
Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature Tj.

t

0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s

tp / s

Fig.11. Transient thermal impedance Z

pulse width tp.

dVD/dt (V/us)

1000

100

10

1

0 50 100 150

Tj / C

th j-mb

, versus

Fig.12. Typical, critical rate of rise of off-state voltage,

dVD/dt versus junction temperature Tj.

June 2001 4 Rev 1.300

Philips Semiconductors Product specification

Triacs BT136B series E
sensitive gate

MECHANICAL DATA

Dimensions in mm
Net Mass: 1.4 g

2.54 (x2)

MOUNTING INSTRUCTIONS

Dimensions in mm

10.3 max

11 max

15.4

0.85 max
(x2)

4.5 max

1.4 max

0.5

Fig.13. SOT404 : centre pin connected to mounting base.

11.5

2.5

Notes

1. Plastic meets UL94 V0 at 1/8".

9.0

17.5

2.0

3.8

5.08

Fig.14. SOT404 : minimum pad sizes for surface mounting.

June 2001 5 Rev 1.300

Philips Semiconductors Product specification

Triacs BT136B series E
sensitive gate

DEFINITIONS

DATA SHEET STATUS
DATA SHEET PRODUCT DEFINITIONS

STATUS

Objective data Development This data sheet contains data from the objective specification for

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 2001

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

2

STATUS

3

product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product

Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

June 2001 6 Rev 1.300