Philips BT136B D Technical data

BT136B-500D

Philips Semiconductors Product specification

Triacs

BT136B series D

logic level

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated,

sensitive gate

SYMBOL

PARAMETER

MAX.

MAX.

UNIT

triacs in a plastic envelope suitable for

BT136B-

500D

600D

surface mounting, intended for use in

general

purpose

bidirectional

VDRM

Repetitive peak off-state voltages

500

600

V

switching

and

phase

control

IT(RMS)

RMS on-state current

4

4

A

applications. These devices are

ITSM

Non-repetitive peak on-state current

25

25

A

intended to be interfaced directly to

microcontrollers, logic

integrated

circuits and other low power gate

trigger circuits.

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

1main terminal 1

2main terminal 2

3gate

mb main terminal 2

	mb
	T2	T1
	2
1	3	G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.		UNIT
				-500		-600
V	Repetitive peak off-state		-	5001		6001	V
DRM	voltages
		full sine wave; Tmb ≤ 107 ˚C
IT(RMS)	RMS on-state current		-		4		A
ITSM	Non-repetitive peak	full sine wave; Tj = 25 ˚C prior to
	on-state current	surge
		t = 20 ms	-		25		A
		t = 16.7 ms	-		27		A
I2t	I2t for fusing	t = 10 ms	-		3.1		A2s
dIT/dt	Repetitive rate of rise of	ITM = 6 A; IG = 0.2 A;
	on-state current after	dIG/dt = 0.2 A/μs					A/μs
	triggering	T2+ G+	-		50
		T2+ G-	-		50		A/μs
		T2- G-	-		50		A/μs
		T2- G+	-		10		A/μs
IGM	Peak gate current		-		2		A
VGM	Peak gate voltage		-		5		V
PGM	Peak gate power		-		5		W
PG(AV)	Average gate power	over any 20 ms period	-		0.5		W
Tstg	Storage temperature		-40		150		˚C
Tj	Operating junction		-		125		˚C
	temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/μs.

October 1997

1

Rev 1.100

Philips Semiconductors Product specification

Triacs				BT136B series D
logic level
THERMAL RESISTANCES
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance	full cycle	-	-	3.0	K/W
	junction to mounting base	half cycle	-	-	3.7	K/W
Rth j-a	Thermal resistance	minimum footprint, FR4 board	-	55	-	K/W
	junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
IGT	Gate trigger current	VD = 12 V; IT = 0.1 A	-	2.0	5	mA
		T2+ G+
		T2+ G-	-	2.5	5	mA
		T2- G-	-	2.5	5	mA
		T2- G+	-	5.0	10	mA
IL	Latching current	VD = 12 V; IGT = 0.1 A	-	1.6	10	mA
		T2+ G+
		T2+ G-	-	4.5	15	mA
		T2- G-	-	1.2	10	mA
		T2- G+	-	2.2	15	mA
IH	Holding current	VD = 12 V; IGT = 0.1 A	-	1.2	10	mA
VT	On-state voltage	IT = 5 A	-	1.4	1.70	V
VGT	Gate trigger voltage	VD = 12 V; IT = 0.1 A	-	0.7	1.5	V
		VD = 400 V; IT = 0.1 A; Tj = 125 ˚C	0.25	0.4	-	V
ID	Off-state leakage current	VD = VDRM(max); Tj = 125 ˚C	-	0.1	0.5	mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
dVD/dt	Critical rate of rise of	VDM = 67% VDRM(max); Tj = 125 ˚C;	-	5	-	V/μs
	off-state voltage	exponential waveform; RGK = 1 kΩ				μs
tgt	Gate controlled turn-on	ITM = 6 A; VD = VDRM(max); IG = 0.1 A;	-	2	-
	time	dIG/dt = 5 A/μs

October 1997

2

Rev 1.100