Philips BT134W-500G, BT134W-500F, BT134W-800G, BT134W-800F, BT134W-800 Datasheet
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Philips Semiconductors Product specification
Triacs BT134W series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope suitable for surface
mounting, intended for use in BT134W- 500 600 800
applications requiring high BT134W- 500F 600F 800F
bidirectional transient and blocking BT134W- 500G 600G 800G
voltage capability and high thermal V
cycling performance. Typical voltages
applications include motor control, I
industrial and domestic lighting, I
heating and static switching. current
DRM
T(RMS)
TSM
PINNING - SOT223 PIN CONFIGURATION SYMBOL
Repetitive peak off-state 500 600 800 V
RMS on-state current 1 1 1 A
Non-repetitive peak on-state 10 10 10 A
PIN DESCRIPTION
4
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
1
23
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 5001600
voltages
RMS on-state current full sine wave; Tsp ≤ 108 ˚C - 1 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 10 A
I2tI
2
t for fusing t = 10 ms - 0.5 A2s
t = 16.7 ms - 11 A
dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
-500 -600 -800
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
September 1997 1 Rev 1.200
Philips Semiconductors Product specification
Triacs BT134W series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full or half cycle - - 15 K/W
junction to solder point
Thermal resistance pcb mounted; minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W
BT134W- ... ...F ...G
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 11 35 25 50 mA
T2- G+ - 30 70 70 100 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 20 20 30 mA
T2+ G- - 16 30 30 45 mA
T2- G- - 5 20 20 30 mA
T2- G+ - 7 30 30 45 mA
Holding current VD = 12 V; IGT = 0.1 A - 5 15 15 30 mA
On-state voltage IT = 2 A - 1.2 1.50 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
Off-state leakage current VD = V
Tj = 125 ˚C
; - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT134W- ... ...F ...G
dVD/dt Critical rate of rise of VDM =67% V
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dV
/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 50 - V/µs
com
t
gt
commutating voltage I
= 1 A;
T(RMS)
dI
/dt = 1.8 A/ms; gate
com
open circuit
Gate controlled turn-on ITM = 1.5 A; - - - 2 - µs
time VD = V
DRM(max)
dIG/dt = 5 A/µs;
; 100 50 200 250 - V/µs
DRM(max)
; IG = 0.1 A;
September 1997 2 Rev 1.200
Philips Semiconductors Product specification
Triacs BT134W series
1
BT134W
IT(RMS) / A
Tsp(max) / C
Ptot / W
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1 1.2
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
100
dI /dt limit
T2- G+ quadrant
10
, where α = conduction angle.
T(RMS)
BT134W
I
T
T
Tj initial = 25 C max
T
104
107
= 180
110
120
90
113
60
116
30
119
122
125
, versus rms
tot
I
TSM
time
IT(RMS) / A
1.2
1
0.8
0.6
0.4
0.2
0
-50 0 50 100 150
Fig.4. Maximum permissible rms current I
versus solder point temperature Tsp.
IT(RMS) / A
2
1.5
1
0.5
BT134W
108 C
Tsp / C
T(RMS)
BT134W
,
1
10us 100us 1ms 10ms 100ms
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
ITSM / A
12
10
8
6
4
2
0
1 10 100 1000
, versus pulse width tp, for
TSM
BT134W
I
T
T
Tj initial = 25 C max
Number of cycles at 50Hz
I
TSM
time
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
0
0.01 0.1 1 10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Tsp ≤ 108˚C.
VGT(Tj)
BT136
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997 3 Rev 1.200
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