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Philips Semiconductors Product specification
Triacs BT132 series D
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope, intended
for use in general purpose BT132- 500D 600D
bidirectional switching and phase V
control applications. These devices I
are intended to be interfaced directly I
to microcontrollers, logic integrated
DRM
T(RMS)
TSM
circuits and other low power gate
trigger circuits.
PINNING - TO92 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 2
2 gate
Repetitive peak off-state voltages 500 600 V
RMS on-state current 1 1 A
Non-repetitive peak on-state current 16 16 A
T1T2
3 main terminal 1
321
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 500
voltages
RMS on-state current full sine wave; T
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
≤51 ˚C - 1 A
lead
on-state current surge
t = 20 ms - 16 A
I2tI
2
t for fusing t = 10 ms - 1.28 A2s
t = 16.7 ms - 17.6 A
dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
600
1
V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
January 1998 1 Rev 1.000
Philips Semiconductors Product specification
Triacs BT132 series D
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-lead
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full cycle - - 60 K/W
junction to lead half cycle - - 80 K/W
Thermal resistance pcb mounted;lead length = 4mm - 150 - K/W
junction to ambient
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 2.0 5 mA
T2+ G- - 2.5 5 mA
T2- G- - 2.5 5 mA
T2- G+ - 5.0 10 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 1.6 10 mA
T2+ G- - 4.5 15 mA
T2- G- - 1.2 10 mA
T2- G+ - 2.2 15 mA
Holding current VD = 12 V; IGT = 0.1 A - 1.2 10 mA
On-state voltage IT = 5 A - 1.4 1.70 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; RGK = 1 kΩ
t
gt
Gate controlled turn-on ITM = 6 A; VD = V
time dIG/dt = 5 A/µs
; Tj = 125 ˚C; - 5 - V/µs
DRM(max)
; IG = 0.1 A; - 2 - µs
DRM(max)
January 1998 2 Rev 1.000
Philips Semiconductors Product specification
Triacs BT132 series D
logic level
1.4
1.2
0.8
0.6
0.4
0.2
Ptot / W
1
0
0
0
0
BT132D
1
0.2 0.4 0.6 0.8 1 1.2
IT(RMS) / A
Tmb(max) / C
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
100
, where α = conduction angle.
T(RMS)
BT132D
I
T
T
Tj initial = 25 C max
dI /dt limit
T
41
=180
53
120
65
90
77
60
89
30
101
113
125
, versus rms
tot
I
TSM
time
IT(RMS) / A
1.2
1
0.8
0.6
0.4
0.2
0
-50 0 50 100 150
BT132D
51 C
Tmb / C
Fig.4. Maximum permissible rms current I
IT(RMS) / A
3
2.5
24
1.5
1
versus lead temperature T
BT132D
lead
.
T(RMS)
,
T2- G+ quadrant
10
10us 100us 1ms 10ms 100ms
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
ITSM / A
20
15
10
5
0
, versus pulse width tp, for
TSM
BT136
I
I
T
Tj initial = 25 C max
10 100 1000
Number of cycles at 50Hz
TSM
time
T
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
0.5
0
0.01 0.1 1 10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; T
VGT(Tj)
BT136
Tj / C
≤ 51˚C.
lead
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
January 1998 3 Rev 1.000
Philips Semiconductors Product specification
Triacs BT132 series D
logic level
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
BT136D
Tj / C
T2+ G+
T2+ GT2- GT2- G+
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature T
IL(Tj)
IL(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
TRIAC
Tj / C
j
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature T
.
j
IT / A
12
Tj = 125 C
Tj = 25 C
10
Vo = 1.27 V
Rs = 0.091 ohms
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3
BT136
typ max
VT / V
Fig.10. Typical and maximum on-state characteristic.
.
Zth j-sp (K/W)
100
10
1
0.1
0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s
Fig.11. Transient thermal impedance Z
pulse width tp.
BT134W
unidirectional
tp / s
bidirectional
t
P
p
D
t
th j-lead
, versus
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
TRIAC
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature T
.
j
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt (V/us)
1000
100
10
1
0 50 100 150
Tj / C
dVD/dt versus junction temperature Tj.
January 1998 4 Rev 1.000
Philips Semiconductors Product specification
Triacs BT132 series D
logic level
MECHANICAL DATA
Dimensions in mm
2.54
Net Mass: 0.2 g
0.66
0.56
1.6
4.8 max
123
5.2 max
12.7 min
0.48
0.40
4.2 max
0.40
min
Fig.13. TO92 Variant; plastic envelope.
Notes
1. Epoxy meets UL94 V0 at 1/8".
January 1998 5 Rev 1.000
Philips Semiconductors Product specification
Triacs BT132 series D
logic level
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1998 6 Rev 1.000
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