Philips BT132 D Technical data
BT132
Philips Semiconductors Product specification
Triacs |
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BT132 series D |
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logic level |
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GENERAL DESCRIPTION |
QUICK REFERENCE DATA |
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Glass |
passivated, sensitive gate |
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PARAMETER |
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MAX. |
MAX. |
UNIT |
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triacs in a plastic envelope, intended |
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BT132- |
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500D |
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600D |
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for use in general purpose |
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bidirectional switching and phase |
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VDRM |
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Repetitive peak off-state voltages |
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500 |
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600 |
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V |
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control applications. These devices |
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IT(RMS) |
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RMS on-state current |
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1 |
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1 |
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A |
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are intended to be interfaced directly |
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ITSM |
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Non-repetitive peak on-state current |
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16 |
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16 |
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A |
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to microcontrollers, logic integrated |
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circuits and other low power gate |
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trigger circuits. |
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PINNING - TO92 |
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PIN CONFIGURATION |
SYMBOL |
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PIN |
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DESCRIPTION |
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1 |
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main terminal 2 |
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T2 |
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T1 |
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2gate
3main terminal 1
3 2 1 |
G |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
UNIT |
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-500 |
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-600 |
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V |
Repetitive peak off-state |
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- |
5001 |
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6001 |
V |
DRM |
voltages |
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full sine wave; Tlead ≤51 ˚C |
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IT(RMS) |
RMS on-state current |
- |
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1 |
A |
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ITSM |
Non-repetitive peak |
full sine wave; Tj = 25 ˚C prior to |
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on-state current |
surge |
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t = 20 ms |
- |
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16 |
A |
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t = 16.7 ms |
- |
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17.6 |
A |
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I2t |
I2t for fusing |
t = 10 ms |
- |
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1.28 |
A2s |
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dIT/dt |
Repetitive rate of rise of |
ITM = 1.5 A; IG = 0.2 A; |
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on-state current after |
dIG/dt = 0.2 A/μs |
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A/μs |
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triggering |
T2+ G+ |
- |
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50 |
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T2+ G- |
- |
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50 |
A/μs |
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T2- G- |
- |
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50 |
A/μs |
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T2- G+ |
- |
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10 |
A/μs |
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IGM |
Peak gate current |
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- |
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2 |
A |
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VGM |
Peak gate voltage |
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- |
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5 |
V |
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PGM |
Peak gate power |
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- |
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5 |
W |
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PG(AV) |
Average gate power |
over any 20 ms period |
- |
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0.5 |
W |
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Tstg |
Storage temperature |
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-40 |
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150 |
˚C |
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Tj |
Operating junction |
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125 |
˚C |
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temperature |
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1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/μs.
January 1998 |
1 |
Rev 1.000 |
Philips Semiconductors Product specification
Triacs |
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BT132 series D |
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logic level |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-lead |
Thermal resistance |
full cycle |
- |
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60 |
K/W |
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junction to lead |
half cycle |
- |
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80 |
K/W |
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Rth j-a |
Thermal resistance |
pcb mounted;lead length = 4mm |
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150 |
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K/W |
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junction to ambient |
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STATIC CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise stated |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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IGT |
Gate trigger current |
VD = 12 V; IT = 0.1 A |
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2.0 |
5 |
mA |
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T2+ G+ |
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T2+ G- |
- |
2.5 |
5 |
mA |
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T2- G- |
- |
2.5 |
5 |
mA |
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T2- G+ |
- |
5.0 |
10 |
mA |
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IL |
Latching current |
VD = 12 V; IGT = 0.1 A |
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1.6 |
10 |
mA |
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T2+ G+ |
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T2+ G- |
- |
4.5 |
15 |
mA |
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T2- G- |
- |
1.2 |
10 |
mA |
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T2- G+ |
- |
2.2 |
15 |
mA |
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IH |
Holding current |
VD = 12 V; IGT = 0.1 A |
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1.2 |
10 |
mA |
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VT |
On-state voltage |
IT = 5 A |
- |
1.4 |
1.70 |
V |
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VGT |
Gate trigger voltage |
VD = 12 V; IT = 0.1 A |
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0.7 |
1.5 |
V |
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VD = 400 V; IT = 0.1 A; Tj = 125 ˚C |
0.25 |
0.4 |
- |
V |
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ID |
Off-state leakage current |
VD = VDRM(max); Tj = 125 ˚C |
- |
0.1 |
0.5 |
mA |
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DYNAMIC CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise stated |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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dVD/dt |
Critical rate of rise of |
VDM = 67% VDRM(max); Tj = 125 ˚C; |
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5 |
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V/μs |
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off-state voltage |
exponential waveform; RGK = 1 kΩ |
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μs |
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tgt |
Gate controlled turn-on |
ITM = 6 A; VD = VDRM(max); IG = 0.1 A; |
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2 |
- |
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time |
dIG/dt = 5 A/μs |
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January 1998 |
2 |
Rev 1.000 |
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