Philips BT131W-600, BT131W-500 Datasheet
Philips Semiconductors Product specification
Triacs BT131W series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glasspassivated,sensitivegatetriacs SYMBOL PARAMETER MAX. MAX. UNIT
in a plastic envelope suitable for
surface mounting, intended for use in BT131W- 500 600
general purpose bidirectional V
switching and phase control I
applications. These devices are I
intended to be interfaced directly to
DRM
T(RMS)
TSM
microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
PINNING - SOT223 PIN CONFIGURATION SYMBOL
Repetitive peak off-state voltages 500 600 V
RMS on-state current 1 1 A
Non-repetitive peak on-state current 10 10 A
PIN DESCRIPTION
4
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
1
23
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 500
voltages
RMS on-state current full sine wave; Tsp ≤ 108 ˚C - 1 A
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 10 A
I2tI
2
t for fusing t = 10 ms - 0.5 A2s
t = 16.7 ms - 11 A
dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
600
1
T1T2
V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
July 1998 1 Rev 1.000
Philips Semiconductors Product specification
Triacs BT131W series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-sp
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full or half cycle - - 15 K/W
junction to solder point
Thermal resistance pcb mounted; minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 0.4 3 mA
T2+ G- - 1.3 3 mA
T2- G- - 1.4 3 mA
T2- G+ - 3.8 7 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 1.2 5 mA
T2+ G- - 4.0 8 mA
T2- G- - 1.0 5 mA
T2- G+ - 2.5 8 mA
Holding current VD = 12 V; IGT = 0.1 A - 1.3 5 mA
On-state voltage IT = 2 A - 1.2 1.5 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.2 0.3 - V
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of change of VDM = 67% V
off-state voltage exponential waveform; RGK = 1 kΩ
t
gt
Gate controlled turn-on ITM = 1.5 A; VD = V
time dIG/dt = 5 A/µs
; Tj = 125 ˚C; 5 15 - V/µs
DRM(max)
; IG = 0.1 A; - 2 - µs
DRM(max)
July 1998 2 Rev 1.000
Philips Semiconductors Product specification
Triacs BT131W series
logic level
1
BT134W
IT(RMS) / A
Tsp(max) / C
Ptot / W
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1 1.2
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
100
dI /dt limit
T2- G+ quadrant
10
, where α = conduction angle.
T(RMS)
BT134W
I
T
T
Tj initial = 25 C max
T
104
107
= 180
110
120
90
113
60
116
30
119
122
125
, versus rms
tot
I
TSM
time
IT(RMS) / A
1.2
1
0.8
0.6
0.4
0.2
0
-50 0 50 100 150
Fig.4. Maximum permissible rms current I
versus lead temperature T
IT(RMS) / A
3
2.5
2.0
1.5
1
BT134W
Tsp / C
BT132D
lead
108 C
.
T(RMS)
,
1
10us 100us 1ms 10ms 100ms
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
ITSM / A
12
10
8
6
4
2
0
1 10 100 1000
, versus pulse width tp, for
TSM
BT134W
I
T
T
Tj initial = 25 C max
Number of cycles at 50Hz
I
TSM
time
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
0.5
0
0.01 0.1 1 10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; T
VGT(Tj)
BT136
Tj / C
≤ 108˚C.
lead
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
July 1998 3 Rev 1.000
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