Philips BT131-500, BT131-600 Datasheet
Philips Semiconductors Product specification
Triacs BT131 series
logic level
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope, intended
for use in general purpose BT131- 500 600
bidirectional switching and phase V
DRM
Repetitive peak off-state voltages 500 600 V
control applications. These devices I
T(RMS)
RMS on-state current 1 1 A
are intended to be interfaced directly I
TSM
Non-repetitive peak on-state current 16 16 A
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
PINNING - TO92 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 2
2 gate
3 main terminal 1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600
V
DRM
Repetitive peak off-state - 500
1
600
1
V
voltages
I
T(RMS)
RMS on-state current full sine wave; T
lead
≤51 ˚C - 1 A
I
TSM
Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 16 A
t = 16.7 ms - 17.6 A
I2tI
2
t for fusing t = 10 ms - 1.28 A2s
dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms period - 0.5 W
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G
321
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/µs.
April 1998 1 Rev 1.000
Philips Semiconductors Product specification
Triacs BT131 series
logic level
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-lead
Thermal resistance full cycle - - 60 K/W
junction to lead half cycle - - 80 K/W
R
th j-a
Thermal resistance pcb mounted;lead length = 4mm - 150 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 0.4 3 mA
T2+ G- - 1.3 3 mA
T2- G- - 1.4 3 mA
T2- G+ - 3.8 7 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 1.2 5 mA
T2+ G- - 4.0 8 mA
T2- G- - 1.0 5 mA
T2- G+ - 2.5 8 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - 1.3 5 mA
V
T
On-state voltage IT = 2.0 A - 1.2 1.5 V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.2 0.3 - V
I
D
Off-state leakage current VD = V
DRM(max)
; Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
DRM(max)
; Tj = 125 ˚C; 5 15 - V/µs
off-state voltage exponential waveform; RGK = 1 kΩ
t
gt
Gate controlled turn-on ITM = 1.5 A; VD = V
DRM(max)
; IG = 0.1 A; - 2 - µs
time dIG/dt = 5 A/µs
April 1998 2 Rev 1.000
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