Philips BT131 DATA SHEET
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BT131 series
Triacs logic level
Rev. 08 — 9 September 2005 Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate triacs in a SOT54 plastic package
1.2 Features
■ Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
■ General purpose switching and phase control
1.4 Quick reference data
■ V
■ V
≤ 600 V (BT131-600) ■ I
DRM
≤ 800 V (BT131-800) ■ I
DRM
T(RMS)
TSM
≤ 1A
≤ 12.5 A
2. Pinning information
Table 1: Pinning
Pin Description Simplified outline Symbol
1 main terminal 2 (T2)
2 gate (G)
3 main terminal 1 (T1)
123
SOT54 (TO-92)
T2
sym051
T1
G
Philips Semiconductors
BT131 series
Triacs logic level
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
BT131-600 TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54
BT131-800
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
I
T(RMS)
I
TSM
2
tI
I
/dt rate of rise of on-state current ITM= 1.5 A; IG=20mA;
dI
T
I
GM
P
GM
P
G(AV)
T
stg
T
j
repetitive peak off-state voltage
[1]
BT131-600
- 600 V
BT131-800 - 800 V
RMS on-state current all conduction angles;
T
= 51.2 °C;
lead
see
Figure 1, 4 and 5
non-repetitive peak on-state
current
half sine wave; Tj=25°C
prior to surge; see
and
3
Figure 2
-1A
t = 20 ms - 12.5 A
t = 16.7 ms - 13.8 A
2
t for fusing t = 10 ms - 1.28 A2s
dI
/dt = 200 mA/µs
G
T2+ G+ - 50 A/µs
T2+ G− -50A/µs
T2− G− -50A/µs
T2− G+ - 10 A/µs
peak gate current - 2 A
peak gate power - 5 W
average gate power over any 20 ms period - 0.1 W
storage temperature −40 +150 °C
junction temperature - 125 °C
[1] Although not recommended, off-state voltages up to 800 V maybeappliedwithoutdamage,butthetriacmay switch to the on-state. The
rate of rise of current should not exceed 3 A/µs.
BT131_SER_8 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 08 — 9 September 2005 2 of 12
Philips Semiconductors
BT131 series
Triacs logic level
1.5
P
tot
(W)
1
0.5
0
0 0.2 0.4 0.6 0.8 1 1.2
a = form factor = I
α
α
T(RMS)/IT(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
16
I
I
TSM
(A)
12
T
003aab038
α =180°
120°
90°
60°
30°
I
T(RMS)
003aab041
T
Tj = 25 °C max
(A)
I
TSM
35
T
lead(max)
(°C)
65
95
125
t
8
4
0
1 10
10
2
10
n
3
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT131_SER_8 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 08 — 9 September 2005 3 of 12
Philips Semiconductors
BT131 series
Triacs logic level
T
tp (s)
003aab040
I
TSM
t
−1
10
I
TSM
(A)
3
10
I
T
Tj = 25 °C max
2
10
(1)
(2)
10
−5
10
−4
10
−3
10
−2
10
tp≤ 20 ms
(1) dIT/dt limit
(2) T2− G+ quadrant
Fig 3. Non-repetitivepeak on-state current as a function of pulse width for sinusoidal currents; maximum values
003aab039
I
T(RMS)
(A)
3
003aab042
1.2
I
T(RMS)
(A)
51.2 °C
2
1
0
−2
10
f = 50 Hz; T
−1
surge duration (s)
≤ 51.2 °C (1) T
lead
10110
Fig 4. RMS on-state current as a function of surge
duration, for sinusoidal currents; maximum
values
0.8
0.4
0
−50 0 50 100 150
= 51.2 °C
lead
(°C)
T
lead
Fig 5. RMS on-state current as a function of lead
temperature; maximum values
BT131_SER_8 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 08 — 9 September 2005 4 of 12
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