Philips BT1308-400D, BT1308-600D Technical data

BT1308-400D

BT1308-400D/600D

Logic level triac

Rev. 01 — 19 February 2004

Product data

M3D186

1.Product profile

1.1Description

Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

1.2	Features
	■ Sensitive gate in all four quadrants	■ Low cost package.
1.3	Applications
	■ General purpose bidirectional	■ Phase control applications
	switching
	■ Solid state relays	■ Low power AC fan speed controllers.
1.4	Quick reference data
	■ VDRM ≤ 600 V (BT1308-600D)	■ VDRM ≤ 400 V (BT1308-400D)
	■ ITSM ≤ 9 A	■ IT(RMS) ≤ 0.8 A.

2. Pinning information

Table 1:	Pinning - SOT54 (TO-92), simplified outline and symbol
Pin	Description	Simplified outline							Symbol
1	main terminal 2
		1					1
2	gate
		2
		3
3	main terminal 1													2
							3							MBL305
							MSB033

SOT54 (TO-92)

Philips Semiconductors		BT1308-400D/600D
			Logic level triac
3. Ordering information
Table 2: Ordering information
Type number	Package
	Name	Description		Version
BT1308-600D	TO-92	Plastic single-ended leaded (through hole) package; 3 leads		SOT54
BT1308-400D	TO-92	Plastic single-ended leaded (through hole) package; 3 leads		SOT54

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol	Parameter	Conditions	Min	Max	Unit
VDRM	repetitive peak off-state voltage
	BT1308-600D	25 °C ≤ Tj ≤ 125 °C	-	600	V
	BT1308-400D		-	400	V
IT(RMS)	on-state current (RMS value)	full sine wave; Tlead ≤ 55 °C; Figure 1 and 2	-	0.8	A
ITSM	non-repetitive peak on-state current	full sine wave; Tj = 25 °C prior to surge;
		Figure 3 and 4
		t = 20 ms	-	9	A
		t = 16.7 ms	-	10	A
I2t	I2t for fusing	t = 10 ms	-	0.32	A2s
dIT/dt	repetitive rate of rise of on-state	ITM = 1 A; IG = 0.2 A; dIG/dt = 0.2 A/μs
	current after triggering
		T2+ G+	-	50	A/μs
		T2+ G−	-	50	A/μs
		T2− G−	-	50	A/μs
		T2− G+	-	10	A/μs
IGM	gate current (peak value)	t = 2 μs max	-	1	A
VGM	gate voltage (peak value)		-	5	V
PGM	gate power (peak value)		-	5	W
PG(AV)	average gate power	t = 2 μs max; Tcase ≤ 80 °C	-	0.1	W
Tstg	storage temperature		−40	+150	°C
Tj	junction temperature		−40	+125	°C

9397 750 12594

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data

Rev. 01 — 19 February 2004

2 of 11

Philips Semiconductors	BT1308-400D/600D
	Logic level triac

1			003aaa616	3			003aaa617
IT(RMS)				IT(RMS)
(A)
				(A)
0.75
				2
0.5
				1
0.25
0				0
0	50	100	150
				10-3	10-2	1	tsurge (s)	10
			Tlead (°C)

	f = 50 Hz
	Tlead ≤ 65 °C
Fig 1. Maximum permissible on-state current (RMS	Fig 2. Maximum permissible repetitive on-state
value) as a function of lead temperature.	current (RMS value) as a function of surge
	duration for sinusoidal currents.

						003aaa614	12			003aaa615
	103
						I TSM
	ITSM		I	T			ITSM
							(A)
	(A)
					tp	time
	102						8
		dIT/dt limit
	10	T2- G+ quadrant					4
	1						0		102	103
							1	10
	10-5	10-4	10-3		10-2	10-1
										n
						tp (s)

tp ≤ 20 ms	n = number of cycles
initial Tj ≤ 25 °C	f = 50 Hz
	initial Tj ≤ 25 °C
Fig 3. Maximum permissible non-repetitive peak	Fig 4. Maximum permissible non-repetitive peak
on-state current as a function of pulse width for	on-state current as a function of number of
sinusoidal currents.	cycles for sinusoidal currents.

9397 750 12594

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data

Rev. 01 — 19 February 2004

3 of 11

Philips Semiconductors		BT1308-400D/600D
				Logic level triac
5. Thermal characteristics
Table 4:	Thermal characteristics
Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Rth(j-lead)	thermal resistance from junction to lead	full cycle	-	-	60	K/W
		half cycle			80
Rth(j-a)	thermal resistance from junction to ambient	mounted on a printed-circuit board;	-	150	-	K/W
		lead length = 4 mm; Figure 5

5.1 Transient thermal impedance

103							003aaa029
Zth(j-a)
(K/W)
102
10
					P	tp
							t
1
10-5	10-4	10-3	10-2	10-1	1		10
						tp	(s)

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values.

9397 750 12594

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data

Rev. 01 — 19 February 2004

4 of 11