Philips BT1308-400D, BT1308-600D Technical data

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M3D186
1. Product profile
1.1 Description
BT1308-400D/600D
Logic level triac
Rev. 01 — 19 February 2004 Product data
Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Sensitive gate in all four quadrants Low cost package.
1.3 Applications
General purpose bidirectional
switching
Solid state relays Low power AC fan speed controllers.
Phase control applications
1.4 Quick reference data
V
I
600 V (BT1308-600D) V
DRM
9A I
TSM
DRM
T(RMS)
2. Pinning information
Table 1: Pinning - SOT54 (TO-92), simplified outline and symbol
Pin Description Simplified outline Symbol
1 main terminal 2 2 gate 3 main terminal 1
1
2
3
SOT54 (TO-92)
MSB033
400 V (BT1308-400D)
0.8 A.
1
2
MBL305
3
Philips Semiconductors
BT1308-400D/600D
Logic level triac
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
BT1308-600D TO-92 Plastic single-ended leaded (through hole) package; 3 leads SOT54 BT1308-400D TO-92 Plastic single-ended leaded (through hole) package; 3 leads SOT54
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
I
T(RMS)
I
TSM
2
tI
I dI
T
I
GM
V
GM
P
GM
P
G(AV)
T
stg
T
j
repetitive peak off-state voltage
BT1308-600D 25 °C T
125 °C - 600 V
j
BT1308-400D - 400 V
on-state current (RMS value) full sine wave; T
55 °C; Figure 1 and 2 - 0.8 A
lead
non-repetitive peak on-state current full sine wave; Tj=25°C prior to surge;
Figure 3 and 4
t=20ms - 9 A t = 16.7 ms - 10 A
2
t for fusing t = 10 ms - 0.32 A2s
/dt repetitive rate of rise of on-state
current after triggering
ITM= 1 A; IG= 0.2 A; dIG/dt = 0.2 A/µs
T2+ G+ - 50 A/µs T2+ G -50A/µs T2 G -50A/µs
T2 G+ - 10 A/µs gate current (peak value) t = 2 µs max - 1 A gate voltage (peak value) - 5 V gate power (peak value) - 5 W average gate power t = 2 µs max; T
80 °C - 0.1 W
case
storage temperature 40 +150 °C junction temperature 40 +125 °C
9397 750 12594
Product data Rev. 01 — 19 February 2004 2 of 11
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Philips Semiconductors
BT1308-400D/600D
Logic level triac
T
lead
003aaa616
(°C)
I
T(RMS)
(A)
1
0.75
0.5
0.25
0
0 50 100 150
Fig 1. Maximum permissible on-state current (RMS
value) as a function of lead temperature.
003aaa614
I
TSM
t
p
time
I
TSM
(A)
3
10
2
10
I
T
003aaa617
1
t
surge
(s)
10
I
T(RMS)
(A)
3
2
1
0
-3
10
-2
10
f = 50 Hz T
65 °C
lead
Fig 2. Maximum permissible repetitive on-state
current (RMS value) as a function of surge duration for sinusoidal currents.
003aaa615
I
TSM
(A)
12
8
dIT/dt limit
-5
10
T2- G+ quadrant
10
1
tp≤ 20 ms initial Tj≤ 25 °C
-4
10
-3
10
-2
10
tp (s)
-1
10
4
0
11010210
n = number of cycles f = 50 Hz
3
n
initial Tj≤ 25 °C
Fig 3. Maximum permissible non-repetitive peak
on-state current as a function of pulse width for sinusoidal currents.
9397 750 12594
Fig 4. Maximum permissible non-repetitive peak
on-state current as a function of number of cycles for sinusoidal currents.
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data Rev. 01 — 19 February 2004 3 of 11
Philips Semiconductors
BT1308-400D/600D
Logic level triac
5. Thermal characteristics
Table 4: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-lead)
R
th(j-a)
thermal resistance from junction to lead full cycle - - 60 K/W
half cycle 80
thermal resistance from junction to ambient mounted on a printed-circuit board;
- 150 - K/W
lead length = 4 mm; Figure 5
5.1 Transient thermal impedance
t
p
tp (s)
003aaa029
t
10
Z
th(j-a)
(K/W)
3
10
2
10
10
P
1
-5
10
-4
10
-3
10
-2
10
-1
10
1
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values.
9397 750 12594
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data Rev. 01 — 19 February 2004 4 of 11
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