BT1308-400D
BT1308-400D/600D
Logic level triac
Rev. 01 — 19 February 2004 |
Product data |
M3D186
1.Product profile
1.1Description
Logic level sensitive gate triac intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
1.2 |
Features |
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■ Sensitive gate in all four quadrants |
■ Low cost package. |
1.3 |
Applications |
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■ General purpose bidirectional |
■ Phase control applications |
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switching |
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■ Solid state relays |
■ Low power AC fan speed controllers. |
1.4 |
Quick reference data |
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■ VDRM ≤ 600 V (BT1308-600D) |
■ VDRM ≤ 400 V (BT1308-400D) |
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■ ITSM ≤ 9 A |
■ IT(RMS) ≤ 0.8 A. |
2. Pinning information
Table 1: |
Pinning - SOT54 (TO-92), simplified outline and symbol |
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Pin |
Description |
Simplified outline |
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Symbol |
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1 |
main terminal 2 |
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1 |
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1 |
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2 |
gate |
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2 |
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3 |
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3 |
main terminal 1 |
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2 |
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3 |
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MBL305 |
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MSB033 |
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SOT54 (TO-92)
Philips Semiconductors |
BT1308-400D/600D |
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Logic level triac |
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3. Ordering information |
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Table 2: Ordering information |
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Type number |
Package |
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Name |
Description |
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Version |
BT1308-600D |
TO-92 |
Plastic single-ended leaded (through hole) package; 3 leads |
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SOT54 |
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BT1308-400D |
TO-92 |
Plastic single-ended leaded (through hole) package; 3 leads |
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SOT54 |
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4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol |
Parameter |
Conditions |
Min |
Max |
Unit |
VDRM |
repetitive peak off-state voltage |
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BT1308-600D |
25 °C ≤ Tj ≤ 125 °C |
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600 |
V |
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BT1308-400D |
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400 |
V |
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IT(RMS) |
on-state current (RMS value) |
full sine wave; Tlead ≤ 55 °C; Figure 1 and 2 |
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0.8 |
A |
ITSM |
non-repetitive peak on-state current |
full sine wave; Tj = 25 °C prior to surge; |
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Figure 3 and 4 |
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t = 20 ms |
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9 |
A |
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t = 16.7 ms |
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10 |
A |
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I2t |
I2t for fusing |
t = 10 ms |
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0.32 |
A2s |
dIT/dt |
repetitive rate of rise of on-state |
ITM = 1 A; IG = 0.2 A; dIG/dt = 0.2 A/μs |
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current after triggering |
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T2+ G+ |
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50 |
A/μs |
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T2+ G− |
- |
50 |
A/μs |
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T2− G− |
- |
50 |
A/μs |
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T2− G+ |
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10 |
A/μs |
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IGM |
gate current (peak value) |
t = 2 μs max |
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1 |
A |
VGM |
gate voltage (peak value) |
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5 |
V |
PGM |
gate power (peak value) |
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5 |
W |
PG(AV) |
average gate power |
t = 2 μs max; Tcase ≤ 80 °C |
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0.1 |
W |
Tstg |
storage temperature |
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−40 |
+150 |
°C |
Tj |
junction temperature |
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−40 |
+125 |
°C |
9397 750 12594 |
© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data |
Rev. 01 — 19 February 2004 |
2 of 11 |
Philips Semiconductors |
BT1308-400D/600D |
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Logic level triac |
1 |
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003aaa616 |
3 |
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003aaa617 |
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IT(RMS) |
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IT(RMS) |
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(A) |
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(A) |
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0.75 |
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2 |
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0.5 |
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1 |
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0.25 |
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0 |
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0 |
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0 |
50 |
100 |
150 |
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10-3 |
10-2 |
1 |
tsurge (s) |
10 |
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Tlead (°C) |
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f = 50 Hz |
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Tlead ≤ 65 °C |
Fig 1. Maximum permissible on-state current (RMS |
Fig 2. Maximum permissible repetitive on-state |
value) as a function of lead temperature. |
current (RMS value) as a function of surge |
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duration for sinusoidal currents. |
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003aaa614 |
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003aaa615 |
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103 |
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I TSM |
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ITSM |
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ITSM |
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(A) |
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(A) |
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tp |
time |
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102 |
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dIT/dt limit |
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10 |
T2- G+ quadrant |
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1 |
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0 |
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102 |
103 |
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1 |
10 |
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10-5 |
10-4 |
10-3 |
10-2 |
10-1 |
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n |
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tp (s) |
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tp ≤ 20 ms |
n = number of cycles |
initial Tj ≤ 25 °C |
f = 50 Hz |
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initial Tj ≤ 25 °C |
Fig 3. Maximum permissible non-repetitive peak |
Fig 4. Maximum permissible non-repetitive peak |
on-state current as a function of pulse width for |
on-state current as a function of number of |
sinusoidal currents. |
cycles for sinusoidal currents. |
9397 750 12594 |
© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data |
Rev. 01 — 19 February 2004 |
3 of 11 |
Philips Semiconductors |
BT1308-400D/600D |
|||||
|
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|
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Logic level triac |
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5. Thermal characteristics |
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Table 4: |
Thermal characteristics |
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Symbol |
Parameter |
Conditions |
Min |
Typ |
Max |
Unit |
Rth(j-lead) |
thermal resistance from junction to lead |
full cycle |
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60 |
K/W |
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half cycle |
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80 |
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Rth(j-a) |
thermal resistance from junction to ambient |
mounted on a printed-circuit board; |
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150 |
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K/W |
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lead length = 4 mm; Figure 5 |
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5.1 Transient thermal impedance
103 |
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003aaa029 |
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Zth(j-a) |
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(K/W) |
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102 |
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10 |
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P |
tp |
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t |
1 |
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10-5 |
10-4 |
10-3 |
10-2 |
10-1 |
1 |
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10 |
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tp |
(s) |
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values.
9397 750 12594 |
© Koninklijke Philips Electronics N.V. 2004. All rights reserved. |
Product data |
Rev. 01 — 19 February 2004 |
4 of 11 |