Philips BT1306-400D, BT1306-600D Technical data

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M3D186

1. Product profile

1.1 Description

1.2 Features

BT1306-400D/600D

Logic level triac

Rev. 01 — 19 February 2004 Product data

Logic level sensitive gate triac intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.

■ Sensitive gate in all four quadrants ■ Low cost package.

1.3 Applications

■ General purpose bidirectional

switching

■ Solid state relays ■ Low power AC fan speed controllers.

■ Phase control applications

1.4 Quick reference data

■ V
■ I

≤ 600 V (BT1306-600D) ■ V

DRM

≤ 8A ■ I

TSM

DRM

T(RMS)

2. Pinning information

Table 1: Pinning - SOT54 (TO-92), simplified outline and symbol

Pin Description Simplified outline Symbol

1 main terminal 2
2 gate
3 main terminal 1

1

2

3

SOT54 (TO-92)

MSB033

≤ 400 V (BT1306-400D)

≤ 0.6 A.

1

2

MBL305

3

Philips Semiconductors

BT1306-400D/600D

Logic level triac

3. Ordering information

Table 2: Ordering information

Type number Package

Name Description Version

BT1306-600D TO-92 Plastic single-ended leaded (through hole) package; 3 leads SOT54
BT1306-400D TO-92 Plastic single-ended leaded (through hole) package; 3 leads SOT54

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DRM

I

T(RMS)

I

TSM

2

tI

I
dI

T

I

GM

V

GM

P

GM

P

G(AV)

T

stg

T

j

repetitive peak off-state voltage

BT1306-600D 25 °C ≤ T

≤ 125 °C - 600 V

j

BT1306-400D - 400 V

on-state current (RMS value) full sine wave; T

≤ 65 °C; Figure 1 and 2 - 0.6 A

lead

non-repetitive peak on-state current full sine wave; Tj=25°C prior to surge;

Figure 3 and 4

t=20ms - 8 A
t = 16.7 ms - 8.8 A

2

t for fusing t = 10 ms - 0.32 A2s

/dt repetitive rate of rise of on-state

current after triggering

ITM= 1 A; IG= 0.2 A; dIG/dt = 0.2 A/µs

T2+ G+ - 50 A/µs
T2+ G− -50A/µs
T2− G− -50A/µs

T2− G+ - 10 A/µs
gate current (peak value) t = 2 µs max - 1 A
gate voltage (peak value) - 5 V
gate power (peak value) - 5 W
average gate power t = 2 µs max; T

≤ 80 °C - 0.1 W

case

storage temperature −40 +150 °C
junction temperature −40 +125 °C

9397 750 12593

Product data Rev. 01 — 19 February 2004 2 of 11

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Philips Semiconductors

BT1306-400D/600D

Logic level triac

T

lead

003aaa037

(˚C)

150

I

T(RMS)

(A)

0.8

0.6

0.4

0.2

0

0

50

100

Fig 1. Maximum permissible on-state current (RMS

value) as a function of lead temperature.

003aaa040

I

TSM

t

p

time

I

TSM

(A)

3

10

2

10

I

T

003aaa041

1

t

surge

(s)

10

I

T(RMS)

(A)

3

2

1

0

-3

10

-2

10

f = 50 Hz
T

≤ 65 °C

lead

Fig 2. Maximum permissible repetitive on-state

current (RMS value) as a function of surge
duration for sinusoidal currents.

003aaa038

I

TSM

(A)

10

8

6

dIT/dt limit

4

2

0

11010210

n = number of cycles
f = 50 Hz

3

n

-5

10

T2- G+ quadrant

10

1

tp≤ 20 ms
initial Tj≤ 25 °C

-4

10

-3

10

-2

10

tp (s)

-1

10

initial Tj≤ 25 °C

Fig 3. Maximum permissible non-repetitive peak

on-state current as a function of pulse width for
sinusoidal currents.

9397 750 12593

Fig 4. Maximum permissible non-repetitive peak

on-state current as a function of number of
cycles for sinusoidal currents; typical values.

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data Rev. 01 — 19 February 2004 3 of 11

Philips Semiconductors

BT1306-400D/600D

Logic level triac

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-lead)

R

th(j-a)

thermal resistance from junction to lead full cycle - - 60 K/W

half cycle 80

thermal resistance from junction to ambient mounted on a printed-circuit board;

- 150 - K/W

lead length = 4 mm; Figure 5

5.1 Transient thermal impedance

t

p

tp (s)

003aaa029

t

10

Z

th(j-a)
(K/W)

3

10

2

10

10

P

1

-5

10

-4

10

-3

10

-2

10

-1

10

1

Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values.

9397 750 12593

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data Rev. 01 — 19 February 2004 4 of 11