Philips bsx59, bsx61 Service manual
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BSX59; BSX61
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 22
Philips Semiconductors Product specification
NPN switching transistors BSX59; BSX61
FEATURES
• High current (max. 1 A)
• Low voltage (max. 45 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• High-speed switching in industrial applications.
DESCRIPTION
handbook, halfpage
1
2
NPN switching transistor in a TO-39 metal package.
2
3
MAM317
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
t
off
collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 45 V
collector current (DC) − 1A
total power dissipation T
≤ 25 °C − 800 mW
amb
DC current gain IC= 500 mA; VCE=1V 30 −
transition frequency IC= 50 mA; VCE= 10 V; f = 100 MHz 250 − MHz
turn-off time I
= 500 mA; I
Con
= 50 mA; I
Bon
= −50 mA
Boff
BSX59 − 60 ns
BSX61 − 100 ns
3
1
1997 May 22 2
Philips Semiconductors Product specification
NPN switching transistors BSX59; BSX61
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 70 V
collector-emitter voltage open base − 45 V
emitter-base voltage open collector − 5V
collector current (DC) − 1A
peak collector current − 1A
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 800 mW
amb
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 220 K/W
thermal resistance from junction to case 43 K/W
1997 May 22 3
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