Philips BSX20 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D125
BSX20
NPN switching transistor
Product specification
Supersedes data of September 1994
1997 May 14
File under Discrete Semiconductors, SC04
Philips Semiconductors Product specification
NPN switching transistor BSX20
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 15 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• High-speed saturated switching (and HF amplifier
applications).
3
1
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
handbook, halfpage
1
3
2
2
MAM264
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
t
CBO
CEO
C
tot
FE
T
off
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
collector current (DC) − 200 mA
total power dissipation T
≤ 25 °C − 360 mW
amb
DC current gain IC= 10 mA; VCE= 1 V 40 120
I
= 100 mA; VCE=2V 20 −
C
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 500 − MHz
turn-off time I
= 10 mA; I
Con
Bon
= 3 mA; I
= −1.5 mA − 30 ns
Boff
1997 May 14 2
Philips Semiconductors Product specification
NPN switching transistor BSX20
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
I
I
P
T
T
T
CBO
CEO
EBO
C
CM
BM
tot
stg
j
amb
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 4.5 V
collector current (DC) − 200 mA
peak collector current t ≤ 10 µs − 300 mA
peak base current − 100 mA
total power dissipation − 360 mW
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient in free air 480 K/W
thermal resistance from junction to case 150 K/W
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
f
T
collector cut-off current IE= 0; VCB=20V −−400 nA
I
= 0; VCB= 20 V; Tj= 150 °C −−30 µA
E
emitter cut-off current IC= 0; VEB=4V −−100 nA
DC current gain IC= 10 mA; VCE=1V 40 − 120
I
= 10 mA; VCE=1V; Tj=−55 °C20 −−
C
I
= 100 mA; VCE=2V 20 −−
C
collector-emitter saturation voltage IC= 10 mA; IB= 0.3 mA −−300 mV
= 10 mA; IB=1mA −−250 mV
I
C
I
= 100 mA; IB=10mA −−600 mV
C
base-emitter saturation voltage IC= 10 mA; IB=1mA 700 − 850 mV
I
= 100 mA; IB=10mA −−1.5 V
C
collector capacitance IE=ie= 0; VCB=5V; f=1MHz −−4pF
emitter capacitance IC=ic= 0; VEB= 1 V; f = 1 MHz −−4.5 pF
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 500 600 − MHz
1997 May 14 3
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