Philips bsw66, bsw 67, bsw 68 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D111
BSW66A; BSW67A; BSW68A
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 May 05
Philips Semiconductors Product specification
NPN switching transistors BSW66A; BSW67A; BSW68A
FEATURES
• High current (max. 1 A)
• High voltage (max. 150 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector, connected to case
• General purpose switching and amplification
• Industrial applications.
handbook, halfpage
1
2
3
DESCRIPTION
MAM317
2
1
NPN transistor in a TO-39 metal package.
3
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSW66A −−100 V
BSW67A −−120 V
BSW68A −−150 V
V
CEO
collector-emitter voltage open base
BSW66A −−100 V
BSW67A −−120 V
BSW68A −−150 V
I
C
P
tot
h
FE
f
T
t
off
collector current (DC) −−1A
total power dissipation T
≤ 25 °C −−5W
case
DC current gain IC= 10 mA; VCE=5V 30 −−
= 500 mA; VCE=5V 30 −−
I
C
transition frequency IC= 100 mA; VCE= 20 V; f = 100 MHz − 130 − MHz
turn-off time I
= 500 mA; I
Con
= 50 mA; I
Bon
= −50 mA − 900 − ns
Boff
1997 May 05 2
Philips Semiconductors Product specification
NPN switching transistors BSW66A; BSW67A; BSW68A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter
BSW66A − 100 V
BSW67A − 120 V
BSW68A − 150 V
collector-emitter voltage open base
BSW66A − 100 V
BSW67A − 120 V
BSW68A − 150 V
emitter-base voltage open collector − 6V
collector current (DC) − 1A
peak collector current tp≤ 20 ms − 2A
peak base current − 200 mA
total power dissipation T
≤ 25 °C − 800 mW
amb
≤ 25 °C − 5W
T
case
storage temperature −65 +150 °C
junction temperature − 200 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
R
th j-a
th j-c
thermal resistance from junction to ambient free air 220 K/W
thermal resistance from junction to case 35 K/W
1997 May 05 3
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